Switching and amplification transistor MDD Microdiode Semiconductor MMBT5401 PNP type in SOT23 package
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5401
Package:
SOT-23-3
Product Description
Product Overview
The MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.
Product Attributes
- Brand: Microdiode
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -160 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -0.6 | A | |||
| Collector Power Dissipation | PC | (Ta=25) | 0.3 | W | ||
| Thermal Resistance Junction To Ambient | RJA | 416 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC =-100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | EI =-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | CB V =-120V, IE=0 | -0.1 | uA | ||
| Emitter cut-off current | IEBO | EB V =-4V, IC=0 | -0.1 | uA | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 80 | |||
| VCE=-5V, IC=-10mA | 100 | 300 | ||||
| VCE=-5V, IC=-50mA | ||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.2 | -0.5 | V | |
| IC=-50mA, IB=-5mA | -1 | -1 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -0.7 | -0.95 | V | |
| IC=-50mA, IB=-5mA | -0.8 | -1 | V | |||
| Transition frequency | fT | CE V =-5V,IC=-10mA, f=30MHz | 100 | MHz |
2411211939_MDD-Microdiode-Semiconductor-MMBT5401_C408397.pdf
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