MDD Microdiode Semiconductor MDD4N65F 650V N Channel MOSFET Designed for Power Supply Applications
Key Attributes
Model Number:
MDD4N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.2pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
600pF@25V
Gate Charge(Qg):
12nC
Mfr. Part #:
MDD4N65F
Package:
TO-220F
Product Description
Product Overview
The MDD4N65F/MDD4N65P/MDD4N65D is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. Key features include ultra-low gate charge, low reverse transfer capacitance, and fast switching capability, making it suitable for power supplies and electronic ballasts. It offers improved dv/dt capability and high ruggedness.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | VDS (V) | ID (Tc=25) (A) | RDS(on),max () | Qg,typ (nC) | Package |
| MDD4N65F | 650 | 4 | 2.8@VGS=10V | 12 | TO-220F-3L |
| MDD4N65P | 650 | 4 | 2.8@VGS=10V | 12 | TO-220-3L |
| MDD4N65D | 650 | 4 | 2.8@VGS=10V | 12 | TO-252 |
| Parameter | Symbol | TO-220F Value | TO-220/TO-252 Value | Unit |
| Thermal resistance, Junction-to-case | RJC | 3.8 | 1.62 | C/W |
| Thermal resistance, Junction-to-ambient | RJA | 110 | 62.5 | C/W |
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | 4.0 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | -- | 2.8 | -- | |
| Input Capacitance | Ciss | VDS=25V VGS=0V f=1MHz | -- | 600 | -- | pF |
| Output Capacitance | Coss | VDS=25V VGS=0V f=1MHz | -- | 55 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V VGS=0V f=1MHz | -- | 3.2 | -- | pF |
| Total Gate Charge | Qg | VDS=520V, VGS=10V, ID=4A | -- | 12 | -- | nC |
| Gate Source Charge | Qgs | VDS=520V, VGS=10V, ID=4A | -- | 3.2 | -- | nC |
| Gate Drain Charge | Qgd | VDS=520V, VGS=10V, ID=4A | -- | 5.1 | -- | nC |
| Turn on Delay Time | td(on) | VDS=325V, ID=4A, RG=10 | -- | -- | 12 | ns |
| Turn on Rise Time | tr | VDS=325V, ID=4A, RG=10 | -- | -- | 31 | ns |
| Turn Off Delay Time | td(off) | VDS=325V, ID=4A, RG=10 | -- | -- | 42 | ns |
| Turn Off Fall Time | tf | VDS=325V, ID=4A, RG=10 | -- | -- | 15 | ns |
| Source drain current(Body Diode) | ISD | -- | -- | -- | 4 | A |
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | -- | 1.5 | -- | V |
| Body Diode Reverse Recovery Time | trr | VR=400 IF=4A, -diF/dt =100A/s | -- | 0.8 | -- | ns |
| Body Diode Reverse Recovery Charge | Qrr | VR=400 IF=4A, -diF/dt =100A/s | -- | 282 | -- | uC |
2408090958_MDD-Microdiode-Semiconductor-MDD4N65F_C5299403.pdf
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