Silicon Carbide MOSFET Megain M2M-0080-120D with High Power Density and High Switching Frequencies
Key Attributes
Model Number:
M2M-0080-120D
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
72.6pF
Output Capacitance(Coss):
17.9pF
Pd - Power Dissipation:
166W
Input Capacitance(Ciss):
2.016nF
Gate Charge(Qg):
85nC
Mfr. Part #:
M2M-0080-120D
Package:
TO-247-3
Product Description
Product Overview
The M2M-0080-120D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness and compliance with Halogen Free and RoHS standards contribute to higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies. This MOSFET is ideal for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Silicon Carbide
- Color: Not Specified
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | VGSmax (V) | ID (A) | PD (W) | V(BR)DSS (V) | VGS(th) (V) | RDS(on) (m) | Ciss (pF) | Coss (pF) | Crss (pF) | EON (J) | EOFF (J) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | VSD (V) | IS (A) | trr (ns) | Qrr (nC) | Irrm (A) | RJC (/W) | RJA (/W) |
| M2M-0080-120D | TO-247-3 | 1200 | -10/+25 | 28 (TC=25C), 20 (TC=100C) | 166 | 1200 | 2.0 - 4.0 | 80 (TC=25C), 120 (TC=150C) | 2016 | 17.9 | 72.6 | 180 | 70 | 23 | 60 | 17 | 12 | 3.5 (TJ=25C), 3.3 (TJ=150C) | 28 | 18 | 80 | 8.0 | 0.75 | 35 |
2506251635_Megain-M2M-0080-120D_C49242767.pdf
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