MDD Microdiode Semiconductor MMDT3946 dual transistor complementary pair NPN and PNP in SOT-363 package
Key Attributes
Model Number:
MMDT3946
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3946
Package:
SOT-363
Product Description
Product Overview
The MMDT3946 is a DUAL TRANSISTOR (NPN+PNP) in a SOT-363 package. It features a complementary pair of epitaxial planar die construction, making it ideal for low power amplification and switching applications. This device integrates one 3904 (NPN) and one 3906 (PNP) transistor.
Product Attributes
- Brand: Microdiode
- Product Code: MMDT3946
- Package Type: SOT-363
- Construction: Epitaxial Planar Die
- Features: Complementary Pair
Technical Specifications
| Parameter | Symbol | TR1 (NPN) 3904 Conditions | Min | Typ | Max | Unit | TR2 (PNP) 3906 Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | -40 | V | ||||||
| Collector-Emitter Voltage | VCEO | 40 | V | -40 | V | ||||||
| Emitter-Base Voltage | VEBO | 5 | V | -5 | V | ||||||
| Collector Current | IC | 200 | mA | -200 | mA | ||||||
| Collector Power Dissipation | PC | 200 | mW | 200 | mW | ||||||
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | 625 | /W | ||||||
| Junction Temperature | Tj | 150 | 150 | ||||||||
| Storage Temperature | Tstg | -55 | +150 | -55 | +150 | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | IC=-10A, IE=0 | -40 | V | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | IC=-1mA, IB=0 | -40 | V | ||||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 5 | V | IE=-10A, IC=0 | -5 | V | ||||
| Collector cut-off current | ICEO | VCE=30V, IB=0 | 500 | nA||||||||
| Collector cut-off current | ICBO | VCB=30V, IE=0 | nA | VCB=-30V, IE=0 | nA | ||||||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 50 | nAVEB=-5V, IC=0 | -50 | nA||||||
| DC current gain | hFE | VCE=1V, IC=0.1mA | 40 | 70 | 100 | VCE=-1V, IC=-0.1mA | 60 | 80 | 100 | ||
| DC current gain | hFE | VCE=1V, IC=1mA | VCE=-1V, IC=-1mA | ||||||||
| DC current gain | hFE | VCE=1V, IC=10mA | VCE=-1V, IC=-10mA | ||||||||
| DC current gain | hFE | VCE=1V, IC=50mA | VCE=-1V, IC=-50mA | ||||||||
| DC current gain | hFE | VCE=1V, IC=100mA | VCE=-1V, IC=-100mA | ||||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.2 | V | IC=-10mA, IB=-1mA | -0.25 | V | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.3 | V | IC=-50mA, IB=-5mA | -0.40 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | IC=-50mA, IB=-5mA | -0.95 | V | ||||
| Transition frequency | fT | VCE=20V,IC=20mA, f=100MHz | 300 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 250 | MHz | ||||
| Delay time | td | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA | 35 | ns | VCC=-3V, VBE(off)=-0.5V IC=10mA, IB1=-1mA | 35 | ns | ||||
| Rise time | tr | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA | 35 | ns | VCC=-3V, VBE(off)=-0.5V IC=10mA, IB1=-1mA | 35 | ns | ||||
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | VCC=-3V, IC=-10mA, IB1= IB2=-1mA | 225 | ns | ||||
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns | VCC=-3V, IC=-10mA, IB1= IB2=-1mA | 75 | ns | ||||
| Collector output capacitance | Cob | VCB=5V, IE=0, f=1MHz | 4 | pFVCB=-5V, IE=0, f=1MHz | 4.5 | pF||||||
| Noise figure | NF | VCE=5V, IC=0.1mA, f=1KHz, Rg=1K,f=200MHz | 5 | dBVCE=-5V, IC=-0.1mA, f=1KHz, Rg=1K,f=200MHz | 4.0 | dB
2507221720_MDD-Microdiode-Semiconductor-MMDT3946_C49383129.pdf
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