Power MOSFET Minos MD20N65 Featuring Fast Switching Speeds and Low On Resistance for Power Electronics
Key Attributes
Model Number:
MD20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
390mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
3.12nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
MD20N65
Package:
TO-3P
Product Description
Product Description
The MD20N65 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key advantages include high voltage capability (VDS=650V), low on-resistance (Rdson<460m @VGS=10V, ID=20A), fast switching speeds, low Crss (typical 15pF), 100% avalanche tested, and improved dv/dt capability. It is also a RoHS compliant product.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS
- Package: TO-3P
Technical Specifications
| Parameter | Rating | Unit | Conditions |
| Absolute Ratings | |||
| Drain-to-Source Voltage (VDSS) | 650 | V | |
| Continuous Drain Current (ID) | 20 | A | Tc = 25C |
| Continuous Drain Current (ID) | 12.6 | A | Tc = 100C |
| Pulsed Drain Current (IDM) | 80 | A | Note1 |
| Gate-to-Source Voltage (VGS) | 30 | V | |
| Single Pulse Avalanche Energy (EAS) | 1200 | mJ | Note2 |
| Thermal Characteristics | |||
| Junction-to-Case Thermal Resistance (RJC) | 0.42 | /W | TO-3P |
| Junction-to-Ambient Thermal Resistance (RJA) | 40 | /W | TO-3P |
| Power Dissipation (PD) | 300 | W | TO-247, TO-3P |
| Derating Factor above 25C | 2.38 | W/ | TO-247, TO-3P |
| Electrical Characteristics (OFF) | |||
| Drain to Source Breakdown Voltage (VDSS) | 650 | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current (IDSS) | 10 | A | VDS=650V, VGS=0V, Tj=25 |
| Drain to Source Leakage Current (IDSS) | 100 | A | VDS=520V, VGS=0V, Tj=125 |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS=+30V |
| Gate to Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS=-30V |
| Electrical Characteristics (ON) | |||
| Drain-to-Source On-Resistance (RDS(ON)) | 0.46 | VGS=10V, ID=20A (Max) | |
| Drain-to-Source On-Resistance (RDS(ON)) | 0.39 | VGS=10V, ID=20A (Typ) | |
| Gate Threshold Voltage (VGS(TH)) | 2.0 - 4.0 | V | VDS = VGS, ID = 250uA |
| Forward Transconductance (gfs) | 12 | S | VDS=20V, ID=10A (Typ) |
| Dynamic Characteristics | |||
| Gate Resistance (Rg) | 1.5 | f=1.0MHz (Typ) | |
| Input Capacitance (Ciss) | 3120 | pF | VGS=0V, VDS=25V, f=1.0MHz (Typ) |
| Output Capacitance (Coss) | 250 | pF | VGS=0V, VDS=25V, f=1.0MHz (Typ) |
| Reverse Transfer Capacitance (Crss) | 15 | pF | VGS=0V, VDS=25V, f=1.0MHz (Typ) |
| Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | 53 | ns | ID=20A, VDD=325V, VGS=10V, RG=20 (Typ) |
| Rise Time (tr) | 85 | ns | ID=20A, VDD=325V, VGS=10V, RG=20 (Typ) |
| Turn-Off Delay Time (td(OFF)) | 99 | ns | ID=20A, VDD=325V, VGS=10V, RG=20 (Typ) |
| Fall Time (Tf) | 93 | ns | ID=20A, VDD=325V, VGS=10V, RG=20 (Typ) |
| Total Gate Charge (Qg) | 62 | nC | ID=20A, VDD=520V, VGS=10V (Typ) |
| Gate to Source Charge (Qgs) | 15 | nC | ID=20A, VDD=520V, VGS=10V (Typ) |
| Gate to Drain (Miller) Charge (Qgd) | 24.5 | nC | ID=20A, VDD=520V, VGS=10V (Typ) |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (Body Diode) (IS) | 20 | A | TC=25C |
| Maximum Pulsed Current (Body Diode) (ISM) | 80 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=20A, VGS=0V (Note4) |
| Reverse Recovery Time (Trr) | 556 | ns | IS=20A, Tj=25C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge (Qrr) | 6143 | nC | IS=20A, Tj=25C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Current (Irrm) | 22.1 | A | IS=20A, Tj=25C, dIF/dt=100A/us, VGS=0V |
2410281607_Minos-MD20N65_C5352770.pdf
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