MDD Microdiode Semiconductor MMBT3904T NPN Transistor SOT523 Package Medium Power Amplification Switching
Key Attributes
Model Number:
MMBT3904T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904T
Package:
SOT-523-3
Product Description
Product Overview
The MMBT3904T is an NPN transistor in a small surface mount SOT-523 package. It is ideal for medium power amplification and switching applications and is complementary to the MMBT3906T.
Product Attributes
- Brand: Microdiode
- Complementary to: MMBT3906T
- Package: SOT-523
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 0.2 | A | |||
| Collector Power Dissipation | PC | 0.15 | W | |||
| Thermal Resistance Junction To Ambient | RJA | 833 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC =10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE =10A, IC=0 | 6 | V | ||
| Emitter cut-off current | IEBO | VEB V =5V, IC=0 | 60 | nA | ||
| DC current gain | hFE(1) | VCE=1V, IC=0.1mA | 40 | |||
| hFE(2) | VCE=1V, IC=1mA | 70 | ||||
| hFE(3) | VCE=1V, IC=10mA | 300 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=10mA, IB=1mA | 0.20 | V | ||
| VCE(sat)2 | IC=50mA, IB=5mA | 0.30 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=10mA, IB=1mA | 0.85 | V | ||
| VBE(sat)2 | IC=50mA, IB=5mA | 0.95 | V | |||
| Transition frequency | fT | VCE=20V,IC=10mA,f=100MHz | 300 | MHz | ||
| Collector output capacitance | Cob | VCB=5V,IE=0,f=1MHz | 4 | pF | ||
| Collector cut-off current | ICEX | VCE=30V,VEB(off)=3V | 50 | nA | ||
| DC current gain | hFE(4) | VCE=1V, IC=50mA | 100 | |||
| Input capacitance | Cib | VCE=5V,IE=0mA,f=1MHz | 8 | pF | ||
| Transition frequency | td | VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Collector output capacitance | tf | V =3V, IC=10mA, IB1= IB2=1mA | 35 | ns | ||
| Input capacitance | tr | 50 | ns | |||
| Collector output capacitance | ts | 200 | ns |
2508071805_MDD-Microdiode-Semiconductor-MMBT3904T_C50176506.pdf
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