Minos MPF5N65 650V N Channel MOSFET designed for power conversion in switch mode power supplies and UPS
Key Attributes
Model Number:
MPF5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
RDS(on):
1.1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
891pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
MPF5N65
Package:
TO-220F
Product Description
Product Overview
This 650V N-Channel MOSFET is designed for high-efficiency power applications. It features fast switching speeds, 100% avalanche tested performance, and improved dv/dt capability, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems. The device is available in TO-220F, TO-220, TO-251, and TO-252 packages.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | TO-220F | TO-220 | TO-251 | TO-252 | Unit |
| Drain-Source Voltage | VDSS | 650 | 650 | 650 | 650 | V |
| Continuous Drain Current | ID | 5 | 5 | 5 | 5 | A |
| Pulsed Drain Current | IDM | 28 | 28 | 28 | 28 | A |
| Gate-Source Voltage | VGSS | ±30 | ±30 | ±30 | ±30 | V |
| Single Pulse Avalanche Energy | EAS | 165 | 165 | 165 | 165 | mJ |
| Avalanche Current | IAS | 5.76 | 5.76 | 5.76 | 5.76 | A |
| Repetitive Avalanche Energy | EAR | 100 | 100 | 100 | 100 | mJ |
| Power Dissipation (TC = 25ºC) | PD | 63 | 97 | 97 | 97 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | ºC | |||
| Thermal Resistance, Junction-to-Case | RthJC | 1.98 | 1.29 | 1.29 | 1.29 | K/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | 60 | 60 | 60 | K/W |
| Device Package | Package | TO-220F | TO-220 | TO-251 | TO-252 | |
| Device Marking | Marking | MPF5N65 | MP5N65 | MDP5N65 | MDT5N65 | |
| Static Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) | V(BR)DSS | 650 | V | |||
| Zero Gate Voltage Drain Current (VDS= 650V, VGS= 0V, TJ= 25ºC) | IDSS | 1 | µA | |||
| Gate-Source Leakage (VGS= ±30V) | IGSS | ±100 | nA | |||
| Gate-Source Threshold Voltage (VDS = VGS, ID = 250µA) | VGS(th) | 3.0 - 4.0 | V | |||
| Drain-Source On-Resistance (VGS= 10V, ID = 3.5A) | RDS(on) | 1.1 - 1.35 | Ω | |||
| Input Capacitance (VGS = 0V, VDS = 25V, f = 1.0MHz) | Ciss | 891 | pF | |||
| Output Capacitance | Coss | 87 | pF | |||
| Reverse Transfer Capacitance | Crss | 10 | pF | |||
| Total Gate Charge (VDD = 520V, ID = 7A, VGS= 10V) | Qg | 32 | nC | |||
| Gate-Source Charge | Qgs | 4.6 | ||||
| Gate-Drain Charge | Qgd | 14 | ||||
| Turn-on Delay Time (VDD = 325V, ID = 7A, RG = 25 Ω) | td(on) | 39 | ns | |||
| Turn-on Rise Time | tr | 23 | ns | |||
| Turn-off Delay Time | td(off) | 137 | ns | |||
| Turn-off Fall Time | tf | 60 | ns | |||
| Continuous Body Diode Current (TC = 25ºC) | IS | 7.0 | A | |||
| Pulsed Diode Forward Current | ISM | 28 | A | |||
| Body Diode Voltage (TJ= 25ºC, ISD = 3.5A, VGS = 0V) | VSD | 1.4 | V | |||
| Reverse Recovery Time (VGS= 0V,IS =7A, diF/dt =100A /μs) | trr | 575 | ns | |||
| Reverse Recovery Charge | Qrr | 1.9 | μC | |||
2411120955_Minos-MPF5N65_C2980286.pdf
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