SOT23 Package PNP Transistor MDD Microdiode Semiconductor MMBT2907A for Electronic Circuit Switching

Key Attributes
Model Number: MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description

MMBT2907A Transistor (PNP)

The MMBT2907A is a PNP transistor in a SOT-23 plastic-encapsulated package. It features epitaxial planar die construction and is a complementary NPN type to the MMBT2222A. This transistor is suitable for various electronic applications requiring amplification and switching.

Product Attributes

  • Brand: Microdiode
  • Package: SOT-23
  • Type: PNP
  • Complementary NPN Type: MMBT2222A

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO-60V
Collector-Emitter VoltageVCEO-60V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-600mA
Collector Power DissipationPC250mW
Thermal Resistance Junction To AmbientRJA500/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC =-10A,IE=0-60V
Collector-emitter breakdown voltageV(BR)CEO*IC =-10mA,IB=0-60V
Emitter-base breakdown voltageV(BR)EBOEI =-10A,IC=0-5V
Collector cut-off currentICBOCB V =-50V,IE=0-20nA
Base cut-off currentIEBOEB V =-3V, IC =0-10nA
Collector cut-off currentICEXCE V =-30 V, VBE(off) =-0.5V-50nA
DC current gainhFEVCE=-10V,IC=-150mA100300
DC current gainhFEVCE=-10V,IC=-0.1mA100
DC current gainhFEVCE=-10V,IC=-1mA100
DC current gainhFEVCE=-10V,IC=-10mA75
DC current gainhFEVCE=-10V,IC=-500mA50
Collector-emitter saturation voltageVCE(sat)*IC =-150mA,IB=-5mA-0.4V
Collector-emitter saturation voltageVCE(sat)*IC =-500mA,IB=-50mA-1.6V
Base-emitter saturation voltageVBE(sat)*IC =-150mA,IB=-15mA-1.3V
Base-emitter saturation voltageVBE(sat)*IC =-500mA,IB=-50mA-2.6V
Transition frequencyfTCE V =-20V,IC=-50mA,f=100MHz200MHz
Delay timetdVCE=-30V,IC=-150mA,B1=-15mA25ns
Rise timetrVCE=-30V,IC=-150mA,B1=-15mA225ns
Storage timetSVCE=-6V,IC=- 150mA, IB1=- IB2=- 15mA60ns
Fall timefVCE=-6V,IC=- 150mA, IB1=- IB2=- 15mA60ns

Package Outline Dimensions (SOT-23)

SymbolDimensions In MillimetersMinTypMax
A0.651.40
A10.20
b0.300.55
c0.080.20
D2.703.10
E1.151.65
E12.80
e0.15
L0.500.70
L10.001.70
012

Packaging Description

SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and are made of polystyrene plastic (anti-static coated).


2509111014_MDD-Microdiode-Semiconductor-MMBT2907A_C408393.pdf

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