N channel MOSFET Minos MPT023N10-T featuring double trench technology for high current power systems
Key Attributes
Model Number:
MPT023N10-T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
360A
RDS(on):
1.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
328pF
Number:
1 N-channel
Output Capacitance(Coss):
1.715nF
Input Capacitance(Ciss):
11.26nF
Pd - Power Dissipation:
416.6W
Gate Charge(Qg):
224nC@10V
Mfr. Part #:
MPT023N10-T
Package:
TOLL-8L
Product Description
Product Overview
The MPT023N10-T is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Test Conditions | Min | Typ | Max |
| Drain-Source Voltage | 100 | V | VGS=0V, ID=250A | 100 | 110 | |
| VDS=100V, VGS=0V | 1 | |||||
| VDS=80V, VGS=0V @TC=125C | 100 | |||||
| Continuous Drain Current | 326 | A | Silicon Limited | |||
| Package Limited | 360 | |||||
| Continuous Drain Current @TC=100C | 206 | A | Silicon Limited | |||
| Pulsed Drain Current | 1304 | A | Note1 | |||
| Gate-Source Voltage | ±20 | V | ||||
| Avalanche Energy | 1225 | mJ | Note2 | |||
| Power Dissipation | 416.6 | W | ||||
| Derating Factor above 25°C | 3.33 | W/°C | ||||
| Operating Junction and Storage Temperature Range | -55 to 150 | °C | ||||
| Maximum Temperature for Soldering | 260 | °C | ||||
| Thermal resistance, Junction-Case | 0.3 | °C/W | ||||
| Thermal resistance, Junction-Ambient | 62.5 | °C/W | ||||
| Gate-Source Forward Leakage | nA | VGS=+20V | 100 | |||
| Gate-Source Reverse Leakage | nA | VGS=-20V | -100 | |||
| Drain-Source On-Resistance | 1.4 | mΩ | VGS=10V, ID=50A | 1.4 | 1.8 | |
| VGS=10V, ID=50A, Pulse width tp≤300µs, δ≤2% | 1.4 | 1.8 | ||||
| Gate Threshold Voltage | 3 | V | VDS=VGS, ID=250µA | 2 | 3 | 4 |
| Input Capacitance | 11260 | pF | VDS=50V, VGS=0, f=1MHz | 11260 | ||
| Output Capacitance | 1715 | pF | VDS=50V, VGS=0, f=1MHz | 1715 | ||
| Reverse Transfer Capacitance | 328 | pF | VDS=50V, VGS=0, f=1MHz | 328 | ||
| Total Gate Charge | 224 | nC | VDD=50V, ID=100A, VGS=10V | 224 | ||
| Gate-Source charge | 80 | nC | VDD=50V, ID=100A, VGS=10V | 80 | ||
| Gate-Drain charge | 38 | nC | VDD=50V, ID=100A, VGS=10V | 38 | ||
| Gate resistance | 3.6 | Ω | VGS=0, VDS=0 | 3.6 | ||
| Turn-On Delay Time | 34 | ns | VDD=50V, ID=10A, VGS=10V, RG=3Ω, Resistive Load | 34 | ||
| Rise Time | 26 | ns | VDD=50V, ID=10A, VGS=10V, RG=3Ω, Resistive Load | 26 | ||
| Turn-Off Delay Time | 78 | ns | VDD=50V, ID=10A, VGS=10V, RG=3Ω, Resistive Load | 78 | ||
| Fall Time | 30 | ns | VDD=50V, ID=10A, VGS=10V, RG=3Ω, Resistive Load | 30 | ||
| Continuous Source Current | 326 | A | ||||
| Maximum Pulsed Current | 1304 | A | ||||
| Diode Forward Voltage | 1.2 | V | VGS=0V, IS=50A | 1.2 | ||
| Reverse Recovery Time | 100 | ns | Is=100A, VGS=0, di/dt=100A/us | 100 | ||
| Reverse Recovery Charge | 280 | nC | Is=100A, VGS=0, di/dt=100A/us | 280 |
2410122024_Minos-MPT023N10-T_C22390008.pdf
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