Durable N channel MOSFET Megain MGP055N10N with Low Gate Threshold Voltage and High Voltage Rating
Key Attributes
Model Number:
MGP055N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
122A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
58pF
Input Capacitance(Ciss):
2.87nF
Output Capacitance(Coss):
925pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MGP055N10N
Package:
TO-220
Product Description
Product Overview
The MGP055N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers a high breakdown voltage of 100V and a low on-state resistance (RDS(ON)) of typically 5.5m at VGS=10V. This device is designed for applications requiring fast switching speeds and high efficiency, with 100% EAS guaranteed. It is suitable for DC/DC converters and high-frequency switching applications, including synchronous rectification. A green device option is available.
Product Attributes
- Brand: MEGAIN
- Model: MGP055N10N
- Package: TO220
- Technology: Advanced Trench MOS
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Voltage | VGS=0V, ID=250uA | 100 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, ID=13.5A | - | 5.5 | 6.6 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=10A | - | 22 | - | S |
| Qg (10V) | Total Gate Charge | VDS=50V, VGS=10V, ID=20A | - | 53 | - | nC |
| Ciss | Input Capacitance | VDS=50V, VGS=0V, F=1MHz | - | 2870 | - | pF |
| Coss | Output Capacitance | VDS=50V, VGS=0V, F=1MHz | - | 925 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=50V, VGS=0V, F=1MHz | - | 58 | - | pF |
| VSD | Diode Forward Voltage | VGS=0V, ISD=10A | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | IF=10A, VR=50V, dlF/dt=100A/us | - | 47.8 | - | nS |
| Qrr | Reverse Recovery Charge | IF=10A, VR=50V, dlF/dt=100A/us | - | 66.5 | - | nC |
Absolute Maximum Ratings
| Symbol | Parameter | TC=25C Unless Otherwise Noted. | Value | Units |
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Drain Current Continuous1,6(TC=25) | 122 | A | |
| ID | Drain Current Continuous1,6 (TC=100) | 87 | A | |
| IDM | Pulsed Drain Current 2 | 344 | A | |
| EAS | Single Pulse Avalanche Energy3 | L=0.1mH | 84 | mJ |
| EAS | Single Pulse Avalanche Energy3 | L=0.5mH | 156 | mJ |
| IAS | Avalanche Current | L=0.1mH | 41 | A |
| IAS | Avalanche Current | L=0.5mH | 25 | A |
| PD | Total Power Dissipation4(TC=25C) | 125 | W | |
| PD | Total Power Dissipation4(TC=100) | 50 | W | |
| TSTG | Storage Temperature Range | -55 to 150 | ||
| TJ | Operating Junction Temperature Range | -55 to 150 |
Thermal Characteristics
| Symbol | Parameter | Max | Units |
| RJA | Thermal Resistance Junction to Ambient1 | 62.5 | /W |
| RJC | Thermal Resistance Junction to Case1 | 1 | /W |
2506251635_Megain-MGP055N10N_C49242757.pdf
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