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quality MCC SI2302TP NChannel Enhancement Mode Transistor Featuring Lead Free and Low RDSON Characteristics factory
quality MCC SI2302TP NChannel Enhancement Mode Transistor Featuring Lead Free and Low RDSON Characteristics factory

MCC SI2302TP NChannel Enhancement Mode Transistor Featuring Lead Free and Low RDSON Characteristics

Key Attributes
Model Number: SI2302-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
72mΩ@4.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
1.2V
Number:
1 N-channel
Input Capacitance(Ciss):
237pF@10V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2302-TP
Package:
SOT-23
Product Description

Product Overview

The SI2302 is an N-Channel Enhancement Mode Field Effect Transistor designed for high performance and reliability. It features a high-density cell design for extremely low RDS(ON), making it suitable for applications requiring efficient power handling. The transistor is rugged, lead-free, and comes in a compact SOT-23 package. It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. A halogen-free option is available upon request.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Product Code: SI2302
  • Package: SOT-23
  • Certifications: UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
  • Environmental: Lead free product acquired, Halogen free available (add "-HF" suffix)
  • Marking Code: S2

Technical Specifications

Symbol Parameter Rating Unit Test Condition Min Typ Max
VDS Drain-source Voltage 20 V
ID Drain Current-Continuous 3 A
IDM Drain Current-Pulsed 10 A
VGS Gate-source Voltage ±8 V
PD Total Power Dissipation 1.25 W
RJA Thermal Resistance Junction to Ambient 100 °C/W Surface Mounted on FR4 Board, t < 10 sec
TJ Operating Junction Temperature °C -55 +150
TSTG Storage Temperature °C -55 +150
BVDSS Drain-Source Breakdown Voltage 20 V VGS = 0V, ID = 10µA
IDSS Zero Gate Voltage Drain Current 1 µA VDS = 20V, VGS = 0V 1
IGSSR Gate Body Leakage Current, Reverse -100 nA VGS = -8V, VDS = 0V 100
IGSSF Gate Body Leakage Current, Forward nA VGS = 8V, VDS = 0V 0.65
VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 50µA 1.2
RDS(ON) Static Drain-Source On-Resistance mΩ VGS = 4.5V, ID = 3.6A 55
RDS(ON) Static Drain-Source On-Resistance mΩ VGS = 2.5V, ID = 3.1A 82
gFS Forward Transconductance S VDS = 5V, ID = 3.6A 237
Ciss Input Capacitance pF VDD = 10V, ID = 3.6A, VGS = 4.5V, RGEN = 6Ω 237
Coss Output Capacitance pF VDS = 10V, ID = 3.6A, VGS = 4.5V 120
Crss Reverse Transfer Capacitance pF VDS = 10V, VGS = 0V, f = 1.0 MHz 45
td(on) Turn-On Delay Time ns 11
tr Turn-On Fall Time ns 23
td(off) Turn-Off Delay Time ns 30
tf Turn-On Rise Time ns 36
Qg Total Gate Charge nC 70
Qgs Gate-Source Charge nC 10
Qgd Gate-Drain Charge nC 8.5
IS Drain-Source Diode Forward Current A VGS = 0V 0.94
VSD Drain-Source Diode Forward Voltage V IS = 0.94A 1.2

SOT-23 Suggested Solder Pad Layout Dimensions:

DIM MIN (inches) MAX (inches) MIN (mm) MAX (mm) NOTE
A .110 .120 2.80 3.04
B .083 .104 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51

Pin Configuration: 1. GATE, 2. SOURCE, 3. DRAIN

Device Packing: Part Number-TP Tape&Reel: 3Kpcs/Reel

Ordering Information: Add "-HF" suffix for halogen free, e.g., SI2302-TP-HF


2409300133_MCC-SI2302-TP_C77977.pdf
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