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quality NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits factory
quality NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits factory

NPN Transistor SOT-23 Package Featuring MDD Microdiode Semiconductor 2SC1815 for Electronic Circuits

Key Attributes
Model Number: 2SC1815
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC1815
Package:
SOT-23
Product Description

The 2SC1815 is an NPN plastic-encapsulated transistor designed for general-purpose applications. It features a SOT-23 package and is suitable for various electronic circuits.

Product Attributes

  • Brand: microdiode
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Value Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5 V
Collector Current IC 150 mA
Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55+150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 50 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE VCE=6V, IC=2mA 130-400
Collector cut-off current ICEO VCE=50V, IB=0 0.1 A
Transition frequency fT VCE=10V, IC= 1mA, f = 30MHz 80 MHz
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V

2411211946_MDD-Microdiode-Semiconductor-2SC1815_C2858506.pdf

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