Power management N channel MOSFET Megain MGD28N06L with excellent CdVdt effect decline and performance
Key Attributes
Model Number:
MGD28N06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
23A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
64pF
Output Capacitance(Coss):
86pF
Pd - Power Dissipation:
34.7W
Input Capacitance(Ciss):
1.378nF
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
MGD28N06L
Package:
TO-252
Product Description
Product Overview
The MGD28N06L is an N-channel MOSFET designed for various power management applications. It features super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. This device is suitable for load switching, PWM applications, and general power management.
Product Attributes
- Brand: Megain
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Parameter | Value | Units | Conditions | |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage (VDS) | 60 | V | ||
| Gate-Source Voltage (VGS) | ±20 | V | ||
| Continuous Drain Current (ID) @ TC=25, VGS=10V | 23 | A | ||
| Continuous Drain Current (ID) @ TC=100, VGS=10V | 15 | A | ||
| Continuous Drain Current (ID) @ TA=25, VGS=10V | 5.6 | A | ||
| Continuous Drain Current (ID) @ TA=70, VGS=10V | 4.5 | A | ||
| Pulsed Drain Current (IDM) | 46 | A | ||
| Single Pulse Avalanche Energy (EAS) | 25.5 | mJ | ||
| Avalanche Current (IAS) | 22.6 | A | ||
| Total Power Dissipation (PD) @ TC=25°C | 34.7 | W | ||
| Total Power Dissipation (PD) @ TA=25°C | 2 | W | ||
| Storage Temperature Range (TSTG) | -55 to 150 | °C | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | °C | ||
| Thermal Characteristics | ||||
| Thermal Resistance Junction-Ambient (RθJA) | - | 62 | °C/W | |
| Thermal Resistance Junction-Case (RθJC) | - | 3.6 | °C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage (BVDSS) | 60 | V | VGS=0V, ID=250µA | |
| BVDSS Temperature Coefficient | - | 0.063 | V/°C | Reference to 25°C, ID=1mA |
| Drain-Source On-state Resistance (RDS(ON)) | 28 | mΩ | VGS=10V, ID=15A (Typ) | |
| Drain-Source On-state Resistance (RDS(ON)) | 35 | mΩ | VGS=10V, ID=15A (Max) | |
| Drain-Source On-state Resistance (RDS(ON)) | 33 | mΩ | VGS=4.5V, ID=10A (Typ) | |
| Drain-Source On-state Resistance (RDS(ON)) | 41 | mΩ | VGS=4.5V, ID=10A (Max) | |
| Gate Threshold Voltage (VGS(th)) | 1.2 | V | VGS=VDS, ID=250µA (Min) | |
| Gate Threshold Voltage (VGS(th)) | 2.5 | V | VGS=VDS, ID=250µA (Max) | |
| VGS(th) Temperature Coefficient | - | -5.24 | mV/°C | |
| Drain-Source Leakage Current (IDSS) | - | 1 | µA | VDS=48V, VGS=0V, TJ=25°C (Max) |
| Drain-Source Leakage Current (IDSS) | - | 5 | µA | VDS=48V, VGS=0V, TJ=55°C (Max) |
| Gate-Source Leakage Current (IGSS) | - | ±100 | nA | VGS=±20V, VDS=0V |
| Forward Transconductance (gfs) | - | 17 | S | VDS=5V, ID=15A (Typ) |
| Gate Resistance (Rg) | - | 3.2 | Ω | VDS=0V, VGS=0V, f=1MHz (Typ) |
| Total Gate Charge (Qg) | - | 12.6 | nC | VDS=48V, VGS=4.5V, ID=12A (Typ) |
| Gate-Source Charge (Qgs) | - | 3.2 | nC | |
| Gate-Drain Charge (Qgd) | - | 6.3 | nC | |
| Turn-on Delay Time (Td(ON)) | - | 8 | nS | VDD=30V, VGS=10V, RG=3.3Ω, ID=10A (Typ) |
| Turn-on Rise Time (Tr) | - | 14.2 | nS | |
| Turn-off Delay Time (Td(OFF)) | - | 24.4 | nS | |
| Turn-off Fall Time (Tf) | - | 4.6 | nS | |
| Input Capacitance (Ciss) | - | 1378 | pF | VDS=15V, VGS=0V, F=1MHz (Typ) |
| Output Capacitance (Coss) | - | 86 | pF | |
| Reverse Transfer Capacitance (Crss) | - | 64 | pF | |
| Diode Characteristics | ||||
| Continuous Source Current (IS) | - | 23 | A | VG=VD=0V, Force Current |
| Pulsed Source Current (ISM) | - | 46 | A | |
| Diode Forward Voltage (VSD) | - | 1.2 | V | VGS=0V, IS=1A, TJ=25°C (Max) |
Note:
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=22.6A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2506251635_Megain-MGD28N06L_C49242749.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
