Microdiode Semiconductor AO3415 P Channel MOSFET 20V SOT23 Package Compact and Load Switching Device
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.8A
Operating Temperature -:
-50℃~+150℃
RDS(on):
37mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
85pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
675pF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
14.2nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a 20V P-Channel MOSFET in a SOT-23 package, designed for load switching and PWM applications. It offers excellent RDS(ON), low gate charge, and operates efficiently at low gate voltages.
Product Attributes
- Brand: Microdiode
- Package: SOT-23
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| VDS =20V, VGS =0V (TA=25) | 10 | |||||
| VDS =0V, VGS =8V | -1 | A | ||||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -0.7 | -1.2 | V |
| VGS =-4.5V, ID =-4A | 37 | 45 | m | |||
| VGS =-3.3V, ID =-3A | 43 | 55 | m | |||
| Drain-source on-state resistance | RDS(on) | VGS =-2.5V, ID =-2A | 52 | 65 | m | |
| Forward transconductance | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Continuous source-drain diode current | IS | TC=25 | -2.0 | A | ||
| Body diode voltage | VSD | IS=-2A,VGS =0V | -0.83 | -1.2 | V | |
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 675 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse transfer capacitance | Crss | 85 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6.5 | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 14.2 | nC | ||
| Gate-Source charge | Qgs | 3.2 | nC | |||
| Gate-drain charge | Qgd | 5.8 | nC | |||
| Turn-on delay time | td(on) | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5, | 15 | ns | ||
| Turn-on rise time | tr | 11 | ns | |||
| Turn-off delay time | td(off) | 22 | ns | |||
| Turn-off fall time | tf | 35 | ns | |||
| Continuous Drain Current | ID | T = 25 oC | -4.8 | A | ||
| Continuous Drain Current | ID | T = 70oC | -3.6 | A | ||
| Pulsed Drain Current | IDM | -30 | A | |||
| Maximum Power Dissipation | PD | T = 25 oC | 1.5 | W | ||
| Maximum Power Dissipation | PD | T = 70oC | 1.0 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -50 | 150 | oC | ||
| Junction-to-Ambient Thermal Resistance | RthJA | PCB mounted | 80 | oC/W |
2409300133_MDD-Microdiode-Semiconductor-AO3415_C840839.pdf
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