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quality MCC MCU18P10Y TP P Channel MOSFET Offering Low RDS on and High Current Capacity for Power Management factory
quality MCC MCU18P10Y TP P Channel MOSFET Offering Low RDS on and High Current Capacity for Power Management factory

MCC MCU18P10Y TP P Channel MOSFET Offering Low RDS on and High Current Capacity for Power Management

Key Attributes
Model Number: MCU18P10Y-TP
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 P-Channel
Output Capacitance(Coss):
97pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
1.05nF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
MCU18P10Y-TP
Package:
TO-252
Product Description

Product Overview

The MCU18P10Y is a P-CHANNEL MOSFET from MCCSEMI, engineered with Split Gate Trench MOSFET Technology. It offers low RDS(on) & FOM, excellent stability and uniformity, and extremely low switching loss. This MOSFET is designed for a wide operating junction temperature range of -55C to +150C and meets UL 94 V-0 flammability rating. It is available in a Lead Free Finish/RoHS Compliant version, with a Halogen Free option available upon request by adding the "-HF" suffix.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Split Gate Trench MOSFET
  • Flammability Rating: UL 94 V-0
  • RoHS Compliant: Yes (indicated by "P" suffix)
  • Halogen Free: Available upon request (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS TC=25C -18 V
Gate-Source Voltage VGS TC=25C 20 V
Continuous Drain Current ID TC=25C -72 A
Continuous Drain Current ID TC=100C -100 A
Pulsed Drain Current IDM (1) -100 A
Avalanche Energy EAS (2) 70 mJ
Total Power Dissipation PD 105 C/W
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance (Junction to Ambient) 1.75 C/W
Thermal Resistance (Junction to Case) 105 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -100 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 A
Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V, TJ=55C -5 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1 -1.8 -2.5 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-10A 90 110 m
Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-5A 100 130 m
Continuous Body Diode Current IS -18 A
Diode Forward Voltage VSD IS=-5A, VGS=0V -1.5 V
Reverse Recovery Time trr IS=-5A,di/dt=100A/s 70 ns
Reverse Recovery Charge Qrr 140 nC
Input Capacitance Ciss VDS=-50V,VGS=-10V,ID=-5A 1050 pF
Output Capacitance Coss VDS=-80V,VGS=0V,f=1MHz 97 pF
Reverse Transfer Capacitance Crss 18 pF
Total Gate Charge Qg VGS=-10V,VDD=-50V,RL=2.5 RGEN=6 20 nC
Gate-Source Charge Qgs 3.9 nC
Gate-Drain Charge Qg 4.3 nC
Turn-On Delay Time td(on) 10 ns
Turn-On Rise Time tr 30 ns
Turn-Off Delay Time td(off) 77 ns
Turn-Off Fall Time tf 81 ns
DIM INCHES MM NOTE
A 0.087 - 0.094 2.20 - 2.40
B 0.000 - 0.005 0.00 - 0.13
C 0.026 - 0.034 0.66 - 0.86
D 0.018 - 0.023 0.46 - 0.58
E 0.256 - 0.264 6.50 - 6.70
F 0.201 - 0.215 5.10 - 5.46
G 0.236 - 0.244 6.00 - 6.20
H 0.086 - 0.094 2.18 - 2.39
I 0.386 - 0.409 9.80 - 10.40
J 0.055 - 0.067 1.40 - 1.70
K 0.043 - 0.051 1.10 - 1.30
L 0.000 - 0.012 0.00 - 0.30
M 0.190 4.83 TYP.
O 0.114 2.90 TYP.
Q 0.063 1.60 TYP.
V 0.211 5.35 TYP.
Ordering Information Packing Part Number
Tape&Reel: 2.5Kpcs/Reel -TP

2412232009_MCC-MCU18P10Y-TP_C5185851.pdf

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