MDD Microdiode Semiconductor MDD3401 MOSFET featuring low on resistance and high density cell design
Key Attributes
Model Number:
MDD3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
45mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 P-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
655pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.5nC@15V
Mfr. Part #:
MDD3401
Package:
SOT-23
Product Description
Product Overview
The MDD3401 is a -30V P-Channel Enhancement Mode MOSFET designed for load/power switching and interfacing switching applications. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation (Note 2) | PD | 1.2 | W | |||
| Thermal Resistance from Junction to Ambient (Note 2) | RθJA | 80 | °C/W | |||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | °C | ||
| Pulsed Drain Current (Note 1) | IDM | -16 | A | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250μA | -30 | V | ||
| Gate-Source Leakage Current | IDSS | VDS=-30V, VGS=0V | -1 | μA | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250μA | -0.5 | -1.2 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.1A | 55 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 45 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4.2A | 50 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-1A | 65 | 80 | mΩ | |
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 655 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 53 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, VGS=-4.5V, ID=-4.2A | 8.5 | nC | ||
| Gate Source Charge | Qgs | VDS=-15V, VGS=-4.5V, ID=-4.2A | 1.8 | nC | ||
| Gate Drain Charge | Qgd | VDS=-15V, VGS=-4.5V, ID=-4.2A | 2.7 | nC | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=-15V, VGS =-10V, ID=-3A, RG=6Ω | 7 | ns | ||
| Turn on Rise Time | tr | VDS=-15V, VGS =-10V, ID=-3A, RG=6Ω | 3.8 | ns | ||
| Turn Off Delay Time | td(off) | VDS=-15V, VGS =-10V, ID=-3A, RG=6Ω | 35 | ns | ||
| Turn Off Fall Time | tf | VDS=-15V, VGS =-10V, ID=-3A, RG=6Ω | 10.5 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | -2 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1 | V | ||
2411211951_MDD-Microdiode-Semiconductor-MDD3401_C427383.pdf
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