High Current N Channel MOSFET MIRACLE POWER MSJ001L with Low Gate Charge and Halogen Free RoHS Compliance
Key Attributes
Model Number:
MSJ001L
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
122A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Input Capacitance(Ciss):
8.788nF
Pd - Power Dissipation:
417W
Output Capacitance(Coss):
455pF
Gate Charge(Qg):
122nC
Mfr. Part #:
MSJ001L
Package:
TOLL-8
Product Description
Product Overview
The MSJ001L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This component offers superior performance with a 200V breakdown voltage and a continuous drain current of 122A at 25C. Key advantages include excellent RDS(on) of 8.0m (typ.) at VGS = 10V and low gate charge, making it ideal for applications requiring efficient motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC (SR) sub-systems, and power management in telecom, industrial automation, and CE markets. It is Halogen-free and RoHS-compliant, with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 122 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 77 | A | ||
| IDM | Drain Current-Pulsed | 233 | A | |||
| PD | Maximum Power Dissipation | TC = 25C | 417 | W | ||
| EAS | Single Pulsed Avalanche Energy | 1056 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.3 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 200 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 200V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 8.0 | 9.6 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 4.7 | - | |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 8788 | - | pF |
| Coss | Output Capacitance | - | 455 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 17 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 100V, VGS = 10V, RL = 5.0, RGEN = 3.0 | - | 30 | - | ns |
| tr | Turn-On Rise Time | - | 58 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 98 | - | ns | |
| tf | Turn-Off Fall Time | - | 43 | - | ns | |
| Qg | Total Gate Charge | VDS = 100V, VGS = 0 to 10V, ID = 20A | - | 122 | - | nC |
| Qgs | Gate-Source Charge | - | 43 | - | nC | |
| Qgd | Gate-Drain Charge | - | 23 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 122 | A |
| ISM | Maximum Pulsed Current | - | - | 233 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 185 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 745 | - | nC |
2504151445_MIRACLE-POWER-MSJ001L_C47361216.pdf
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