N Channel MOSFET with Trench LV Technology MCC SI3099 TP featuring ESD Protection and RoHS Compliance
Product Overview
The SI3099 is an N-Channel MOSFET featuring Trench LV MOSFET Technology. It offers ESD protection up to 2.5KV (HBM) and is designed to meet stringent industry standards, including Moisture Sensitivity Level 1, Halogen Free (Green Device), and Epoxy Meets UL 94 V-0 Flammability Rating. This device is Lead Free Finish/RoHS Compliant. It is suitable for applications requiring a wide operating temperature range from -55C to +150C.
Product Attributes
- Brand: MCCSEMI
- Technology: Trench LV MOSFET
- ESD Protection: Up To 2.5KV (HBM)
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free (Green Device), RoHS Compliant
- Flammability Rating: Epoxy Meets UL 94 V-0
- Packaging: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | 1.1 | A | ||
| Continuous Drain Current | ID | TA=70C | 0.88 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 4.4 | A | ||
| Total Power Dissipation | PD | (Note 4) | 1.1 | W | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.5 | 1.5 | V | |
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1.0 | nA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=0.5A | 360 | 430 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=0.4A | 518 | m | ||
| Forward Transconductance | gFS | VDS=5V, ID=1.1A | 1.4 | S | ||
| Continuous Body Diode Current | IS | 360 | A | |||
| Diode Forward Voltage | VSD | IF=0.5A, dIF/dt=100A/s | 1.2 | 1.5 | V | |
| Reverse Recovery Time | trr | IF=0.5A, dIF/dt=100A/s | 8 | 12 | ns | |
| Reverse Recovery Charge | Qrr | IF=0.5A, dIF/dt=100A/s | 39 | nC | ||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 720 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 80 | pF | ||
| Total Gate Charge | Qg | VDD=15V,VGS=10V, ID=0.5A | 2.6 | nC | ||
| Gate-Source Charge | Qgs | VDD=15V,VGS=10V, ID=0.5A | 1.1 | nC | ||
| Gate-Drain Charge | Qgd | VDD=15V,VGS=10V, ID=0.5A | 1.2 | nC | ||
| Turn-On Delay Time | td(on) | VDS=15V,VGS=10V, ID=0.5A | 3 | ns | ||
| Turn-On Rise Time | tr | VDS=15V,VGS=10V, ID=0.5A | 3 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=15V,VGS=10V, ID=0.5A | 8 | ns | ||
| Turn-Off Fall Time | tf | VDS=15V,VGS=10V, ID=0.5A | 12 | ns | ||
| Gate Resistance | Rg | VGS=2.5V, ID=0.3A | 0.2 | 0.2 | ||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature | -55 | 150 | C | |||
| Thermal Resistance | RJA | Junction to Ambient (Note 2) | 110 | C/W |
Note 1: Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Note 2: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C.
Note 3: Repetitive rating; pulse width limited by max. junction temperature.
Note 4: PD is based on max. junction temperature, using junction-ambient thermal resistance.
Dimensions (SOT-23):
| DIM | INCHES | MM |
|---|---|---|
| A | 0.110 - 0.120 | 2.80 - 3.04 |
| B | 0.083 - 0.104 | 2.10 - 2.64 |
| C | 0.047 - 0.055 | 1.20 - 1.40 |
| D | 0.034 - 0.041 | 0.85 - 1.05 |
| E | 0.067 - 0.083 | 1.70 - 2.10 |
| F | 0.018 - 0.024 | 0.45 - 0.60 |
| G | 0.0004 - 0.006 | 0.01 - 0.15 |
| H | 0.035 - 0.043 | 0.90 - 1.10 |
| J | 0.003 - 0.007 | 0.08 - 0.18 |
| K | 0.012 - 0.020 | 0.30 - 0.51 |
| L | 0.020 | 0.50 |
Suggested Solder Pad Layout:
Internal Structure and Marking Code: 3099 MCCSEMI.COM
2410122018_MCC-SI3099-TP_C3289985.pdf
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