N Channel MOSFET with Trench LV Technology MCC SI3099 TP featuring ESD Protection and RoHS Compliance

Key Attributes
Model Number: SI3099-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.1A
RDS(on):
800mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
39pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
1.5nC
Mfr. Part #:
SI3099-TP
Package:
SOT-23
Product Description

Product Overview

The SI3099 is an N-Channel MOSFET featuring Trench LV MOSFET Technology. It offers ESD protection up to 2.5KV (HBM) and is designed to meet stringent industry standards, including Moisture Sensitivity Level 1, Halogen Free (Green Device), and Epoxy Meets UL 94 V-0 Flammability Rating. This device is Lead Free Finish/RoHS Compliant. It is suitable for applications requiring a wide operating temperature range from -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Trench LV MOSFET
  • ESD Protection: Up To 2.5KV (HBM)
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free (Green Device), RoHS Compliant
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Packaging: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID TA=25C 1.1 A
Continuous Drain Current ID TA=70C 0.88 A
Pulsed Drain Current IDM (Note 3) 4.4 A
Total Power Dissipation PD (Note 4) 1.1 W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 30 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.5 1.5 V
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 10 A
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1.0 nA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=0.5A 360 430 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=0.4A 518 m
Forward Transconductance gFS VDS=5V, ID=1.1A 1.4 S
Continuous Body Diode Current IS 360 A
Diode Forward Voltage VSD IF=0.5A, dIF/dt=100A/s 1.2 1.5 V
Reverse Recovery Time trr IF=0.5A, dIF/dt=100A/s 8 12 ns
Reverse Recovery Charge Qrr IF=0.5A, dIF/dt=100A/s 39 nC
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 800 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 720 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 80 pF
Total Gate Charge Qg VDD=15V,VGS=10V, ID=0.5A 2.6 nC
Gate-Source Charge Qgs VDD=15V,VGS=10V, ID=0.5A 1.1 nC
Gate-Drain Charge Qgd VDD=15V,VGS=10V, ID=0.5A 1.2 nC
Turn-On Delay Time td(on) VDS=15V,VGS=10V, ID=0.5A 3 ns
Turn-On Rise Time tr VDS=15V,VGS=10V, ID=0.5A 3 ns
Turn-Off Delay Time td(off) VDS=15V,VGS=10V, ID=0.5A 8 ns
Turn-Off Fall Time tf VDS=15V,VGS=10V, ID=0.5A 12 ns
Gate Resistance Rg VGS=2.5V, ID=0.3A 0.2 0.2
Operating Junction Temperature Range -55 150 C
Storage Temperature -55 150 C
Thermal Resistance RJA Junction to Ambient (Note 2) 110 C/W

Note 1: Halogen free Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Note 2: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C.

Note 3: Repetitive rating; pulse width limited by max. junction temperature.

Note 4: PD is based on max. junction temperature, using junction-ambient thermal resistance.

Dimensions (SOT-23):

DIM INCHES MM
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50

Suggested Solder Pad Layout:

Internal Structure and Marking Code: 3099 MCCSEMI.COM


2410122018_MCC-SI3099-TP_C3289985.pdf

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