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quality 1200V 4A N Channel Power MOSFET Miracle Power MPF04NA2 Offering Low Gate Charge and Avalanche Energy Test factory
quality 1200V 4A N Channel Power MOSFET Miracle Power MPF04NA2 Offering Low Gate Charge and Avalanche Energy Test factory

1200V 4A N Channel Power MOSFET Miracle Power MPF04NA2 Offering Low Gate Charge and Avalanche Energy Test

Key Attributes
Model Number: MPF04NA2
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
98pF
Number:
-
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
833pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
MPF04NA2
Package:
TO-220F
Product Description

Product Overview

The MPF04NA2 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency applications. It features a 1200V breakdown voltage, 4A continuous drain current, and a low ON-resistance of 2.9 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low gate charge, and is tested for avalanche energy, making it suitable for UPS systems, high-efficiency switch-mode power supplies, and electronic lamp ballasts based on half-bridge configurations.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPF Series
  • Technology: N-Channel Power MOSFET

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 1200V, 4A, 2.9
Low ON Resistance
Fast Switching
Low Gate Charge
100% Single Pulse Avalanche Energy Test
Applications
UPS
High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted 1200 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 4 A
ID Drain Current-Continuous, TC =100C 2.4 A
IDM Drain Current-Pulsed b 16 A
PD Maximum Power Dissipation @ TJ =25C 48 W
EAS Single Pulsed Avalanche Energy d 80 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case Max. 2.6 C/W
RJA Thermal Resistance Junction-Ambient Max. 62.5 C/W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 1200 - - V
IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 3 - 5 V
RDS(on) Static Drain-Source On- Resistance c VGS = 10V, ID =2A - 2.9 4
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 833 - pF
Coss Output Capacitance - 150 - pF
Crss Reverse Transfer Capacitance - 98 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 600V, ID =4A, RG = 25,VGS = 10V - 29 - ns
tr Turn-On Rise Time - 55 - ns
td(off) Turn-Off Delay Time - 94 - ns
tf Turn-Off Fall Time - 88 - ns
Qg Total Gate Charge VDD = 960V, ID =4A, VGS = 10V - 39 - nC
Qgs Gate-Source Charge - 6 - nC
Qgd Gate-Drain Charge - 25 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 4 A
ISM Maximum Pulsed Current VGS = 0V - - 16 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4 - - 1.5 V
trr Reverse Recovery Time IS=4A,Tj = 25 dIF/dt=100A/us, VGS=0V - 595 - ns
Qrr Reverse Recovery Charge - 4.9 - uC

2410122015_MIRACLE-POWER-MPF04NA2_C17701999.pdf

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