MDD Microdiode Semiconductor MDDG10R04P 100V N Channel MOSFET Featuring Low RDSon and RoHS Compliance
Key Attributes
Model Number:
MDDG10R04P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
150W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
MDDG10R04P
Package:
TO-220C-3L
Product Description
Product Overview
The MDDG10R04P is a 100V N-Channel Enhancement Mode MOSFET featuring an extremely low Max RDS(on) of 4.4 m at VGS = 10V, ID = 100A. Produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology, it offers optimized on-state resistance and superior switching performance with a best-in-class soft body diode. This MOSFET is 100% UIS Tested and RoHS Compliant, making it suitable for applications such as synchronous rectification for ATX/Server/Telecom PSUs, motor drives, uninterruptible power supplies, and micro solar inverters.
Product Attributes
- Brand: MDD Semiconductor
- Product Line: Power Trench
- Technology: Shielded Gate
- Certifications: RoHS Compliant, 100% UIS Tested
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25C (Note 1) | 130 | A | ||
| Pulsed Drain Current | IDM | (Note 2) | 520 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 306 | mJ | ||
| Power Dissipation | PD | TA=25C | 150 | W | ||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Thermal Resistance, steady-state | RJA | 52 | C/W | |||
| Electrical Characteristics | ||||||
| Voltage Breakdown Source - Drain | (BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 3.0 | 4.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=100A | 3.2 | 4.4 | m | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDD=50V, ID=100A, RG=6 | 9 | ns | ||
| Turn on Rise Time | tr | 25 | ns | |||
| Turn Off Fall Time | tf | 16 | ns | |||
| Turn Off Delay Time | td(off) | 55 | ns | |||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=100A, VGS=0V | 1.0 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=100A, di/dt=100A/s | 85 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | 100 | nC | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 5900 | pF | ||
| Output Capacitance | Coss | 140 | pF | |||
| Reverse Transfer Capacitance | Crss | 19 | pF | |||
| Total Gate Charge | Qg | VDS=50V, ID=100A, VGS=10V | 52 | nC | ||
| Gate Source Charge | Qgs | nC | ||||
| Gate Drain Charge | Qgd | nC | ||||
2504101957_MDD-Microdiode-Semiconductor-MDDG10R04P_C45350858.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
