N Channel Enhancement Mode MOSFET MIRACLE POWER MS0008Y with 100V Voltage Rating and Low Gate Charge
Key Attributes
Model Number:
MS0008Y
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
79A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Input Capacitance(Ciss):
1.872nF
Pd - Power Dissipation:
114W
Output Capacitance(Coss):
731pF
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
MS0008Y
Package:
PDFN-8(5x6)
Product Description
Product Overview
The MS0008Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with advanced Miracle Technology. It offers exceptional performance with a 100V drain-source voltage and a continuous drain current of 79A. Key advantages include low RDS(on) (typically 7.2m at VGS = 10V) and low gate charge, making it ideal for high-frequency switching and synchronous applications. This MOSFET is also Halogen-free and RoHS-compliant, ensuring environmental responsibility. It is guaranteed 100% EAS tested for reliability. Typical applications include DC/DC converters and high-frequency switching circuits.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Compliance: Halogen-free, RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage, Current, RDS(on) | 100V, 79A, 7.2m@VGS = 10V | ||||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C unless otherwise noted | 100 | V | ||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current-Continuous (ID) | TC = 25C | 79 | A | ||
| Drain Current-Continuous (ID) | TC = 100C | 50 | A | ||
| Drain Current-Pulsed (IDM) | 316 | A | |||
| Maximum Power Dissipation (PD) | TC = 25C | 114 | W | ||
| Single Pulsed Avalanche Energy (EAS) | 121 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 1.1 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 39 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 100V, VGS = 0V | - | - | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 1.2 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 20A | - | 7.2 | 9.0 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 15A | - | 9.0 | 11.2 | m |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VDS = VGS = 0V, f = 1.0MHz | - | 2.0 | - | |
| Input Capacitance (Ciss) | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 1872 | - | pF |
| Output Capacitance (Coss) | - | 731 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 22 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 6.2 | - | 10 | - | ns |
| Turn-On Rise Time (tr) | - | 20 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 40 | - | ns | |
| Turn-Off Fall Time (tf) | - | 54 | - | ns | |
| Total Gate Charge (Qg) | VDS = 50V, VGS = 0 to 10V, ID = 20A | - | 33 | - | nC |
| Gate-Source Charge (Qgs) | - | 5.9 | - | - | |
| Gate-Drain Charge (Qgd) | - | 6.9 | - | - | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VG = VD = 0V, Force Current | - | - | 79 | A |
| Maximum Pulsed Current (ISM) | - | - | 316 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 1A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) | IF = 15A, dIF/dt = 100A/s | - | 40 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IF = 15A, dIF/dt = 100A/s | - | 35 | - | nC |
2504151445_MIRACLE-POWER-MS0008Y_C47361206.pdf
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