Power management P Channel Enhancement Mode MOSFET MDD Microdiode Semiconductor MDD50P02Q 20V rating
Key Attributes
Model Number:
MDD50P02Q
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
50A
RDS(on):
6.2mΩ@4.5V;8mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
356pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
3.845nF
Output Capacitance(Coss):
400pF
Gate Charge(Qg):
50nC@4V
Mfr. Part #:
MDD50P02Q
Package:
PDFN-8L(3x3)
Product Description
MDD50P02Q 20V P-Channel Enhancement Mode MOSFET
This P-Channel MOSFET is produced using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies, as well as current switching in DC/DC and AC/DC (SR) sub-systems.
Product Attributes
- Brand: MDD
- Technology: Power Trench
- Mode: P-Channel Enhancement Mode
- Testing: 100% UIS Tested, 100% dVDS Tested
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate-Source Voltage | VGS | -12 | +12 | V | ||
| Continuous Drain Current | ID | TA=25C (Note 1) | -50 | A | ||
| Single Pulsed Avalanche Energy | EAS | TJ=25C, VDD=-20V, VGS=-10V, L= 0.5mH, R g = 25, IAS=-12A (Note 3) | 36 | mJ | ||
| Power Dissipation | PD | TA=25C (Note 2) | 40 | W | ||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Thermal Resistance, steady-state | RJA | TA=25C unless otherwise specified | 105 | C/W | ||
| Electrical Characteristics (TA=25C unless otherwise specified) | ||||||
| Gate-Source Leakage Current | IGSS | VGS=100V | 1 | A | ||
| Drain-Source Leakage Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -2.5 | -4.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5 V, ID = -12 A | 8.5 | 10.5 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10 V, ID = -15 A | 6.2 | 8.0 | m | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 7 | ns | ||
| Turn on Rise Time | tr | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 9 | ns | ||
| Turn Off Fall Time | tf | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 135 | ns | ||
| Turn Off Delay Time | td(off) | VGS =-10V, VDD=-20V, ID=-10A, RG=3 | 105 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=-20A, VGS=0V | -0.95 | -1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=-10A, di/dt=-100A/s | 19 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-10A, di/dt=-100A/s | 5 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V, VGS=-4V, f=1.0MHz | 3845 | pF | ||
| Output Capacitance | Coss | VDS=-10V, VGS=-4V, f=1.0MHz | 400 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V, VGS=-4V, f=1.0MHz | 356 | pF | ||
| Total Gate Charge | Qg | VDS=-10V, ID=-15A, VGS=-10V | 16 | nC | ||
| Gate Source Charge | Qgs | VDS=-10V, ID=-15A, VGS=-10V | 8 | nC | ||
| Gate Drain Charge | Qgd | VDS=-10V, ID=-15A, VGS=-10V | 7 | nC | ||
2508071805_MDD-Microdiode-Semiconductor-MDD50P02Q_C50176501.pdf
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