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quality Voltage controlled small signal switch MCC 2N7002KWHE3-TP with low RDS ON and AEC Q101 qualification factory
quality Voltage controlled small signal switch MCC 2N7002KWHE3-TP with low RDS ON and AEC Q101 qualification factory

Voltage controlled small signal switch MCC 2N7002KWHE3-TP with low RDS ON and AEC Q101 qualification

Key Attributes
Model Number: 2N7002KWHE3-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
3Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
200mW
Input Capacitance(Ciss):
40pF
Mfr. Part #:
2N7002KWHE3-TP
Package:
SOT-323
Product Description

Product Overview

The HE3 is a voltage-controlled small signal switch designed with a high-density cell structure for low RDS(ON). This AEC-Q101 qualified device features a Halogen Free, Green Device designation and meets UL 94 V-0 flammability rating. It is Moisture Sensitivity Level 1 compliant and Lead Free/RoHS Compliant. The HE3 is suitable for applications requiring a reliable and efficient switching solution.

Product Attributes

  • Brand: MCCSEMI
  • Qualification: AEC-Q101 Qualified
  • Environmental Compliance: Halogen Free (Green Device), Lead Free Finish/RoHS Compliant
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Device Type: Voltage Controlled Small Signal Switch

Technical Specifications

Parameter Symbol Rating Unit Conditions
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain Current-Continuous ID 0.34 A
Power Dissipation PD 0.20 W
Operating Junction Temperature Range -55 to +150 C
Storage Temperature -55 to +150 C
Thermal Resistance 625 C/W Junction to Ambient
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250A
Gate-Threshold Voltage VGS(th) 1.0 to 2.0 V VDS=VGS, ID=1mA
Gate-Body Leakage Current IDSS 10 A VGS=20V, VDS=0V
Zero Gate Voltage Drain Current IGSS 1.0 A VDS=48V, VGS=0V
Drain-Source On-Resistance RDS(on) 2.5 to 30 VGS=10V, ID=300mA / VGS=4.5V, ID=200mA
Input Capacitance Ciss 40 pF VDS=10V,VGS=0V, f=1MHz
Output Capacitance Coss 30 pF VDS=10V,VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 10 pF VDS=10V,VGS=0V, f=1MHz
Turn-On Delay Time td(on) 10 ns VDD=50V,VGS=10V,RL=250, RGS=50,RGEN=25
Turn-Off Delay Time td(off) 15 ns VDD=50V,VGS=10V,RL=250, RGS=50,RGEN=25
Diode Forward Voltage VSD 1.5 V VGS=0V, IS=300mA
Recovered Charge Qr 30 nC VGS=0V, IS=300mA,VR=25V, dl/dt=-100A/s
Reverse Recovery Time trr 30 ns VGS=0V, IS=300mA,VR=25V, dl/dt=-100A/s
Gate-Source Breakdown Voltage BVGSO 21.5 to 30 V IGS=1mA (Open Drain)
DIMENSIONS INCHES MM NOTE
A 0.071 - 0.087 1.80 - 2.20 TYP.
B 0.083 - 0.096 2.10 - 2.45 TYP.
C 0.045 - 0.053 1.15 - 1.35 TYP.
D 0.047 - 0.055 1.20 - 1.40 TYP.
E 0.012 - 0.016 0.30 - 0.40 TYP.
F 0.000 - 0.004 0.00 - 0.10 TYP.
G 0.035 - 0.044 0.90 - 1.10 TYP.
H 0.002 - 0.010 0.05 - 0.25 TYP.
J 0.006 - 0.016 0.15 - 0.40 TYP.
K 0.026 0.65 TYP.
L 0.010 - 0.018 0.26 - 0.46 TYP.
Part Number Device Packing Quantity
HE3 Tape&Reel 3Kpcs/Reel

2409302332_MCC-2N7002KWHE3-TP_C3290102.pdf

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