SOT 23 Packaged N Channel MOSFET MDD Microdiode Semiconductor AO3402 Suitable for Electronic Circuits
Key Attributes
Model Number:
AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
30pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
240pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
3.1nC@15V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description
Product Overview
The AO3402 is a lead-free, SOT-23 packaged N-Channel MOSFET designed for surface mount applications. It offers a robust set of electrical characteristics suitable for various electronic designs.
Product Attributes
- Lead Free Product: Acquired
- Package: SOT-23
- Brand: Microdiode (implied by URL)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Maximum Ratings and Thermal Characteristics | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±16 | V | |
| Continuous Drain Current | ID | 5.0 | A | |
| Pulsed Drain Current | IDM | 20.4 | A | 1) Pulse width limited by maximum junction temperature. |
| Maximum Power Dissipation | PD | 1.5 | W | 2) Surface Mounted on FR4 Board, t ≤ 5 sec. |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -50 to 150 | °C | |
| Thermal Resistance Junction-Ambient | RθJA | 80 | °C/W | 2) TA=25°C |
| Electrical Characteristics (TA = 25°C unless otherwise specified) | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250uA |
| Drain-Source On-State Resistance | RDS(on)MAX | 28 | mΩ | VGS = 10V, ID = 4.0A (Typical) |
| Drain-Source On-State Resistance | RDS(on)MAX | 34 | mΩ | VGS = 4.5V, ID = 3.0A (Typical) |
| Gate Threshold Voltage | VGS(th) | 0.8 | V | VDS = VGS, ID = 250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=±16V, VDS=0V |
| Forward Transconductance | gfs | 8 | S | VDS = 15V, ID = 4A |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 4.0A, VGS = 0V |
| Diode Forward Voltage | VSD | 0.85 | V | IS = 1.8A, VGS = 0V |
| Dynamic Characteristics (TA = 25°C unless otherwise specified) | ||||
| Total Gate Charge | Qg | 3.1 | nC | VDS = 15V, ID = 4A, VGS = 4.5V |
| Gate-Source Charge | Qgs | 1.3 | nC | VDS = 15V, ID = 4A, VGS = 4.5V |
| Gate-Drain Charge | Qgd | 0.4 | nC | VDS = 15V, ID = 4A, VGS = 4.5V |
| Turn-On Delay Time | td(on) | 4.4 | ns | VDD = 15V, RG=3.3 Ω, ID = 1A,VGS = 10V |
| Turn-On Rise Time | tr | 2.6 | ns | VDD = 15V, RG=3.3 Ω, ID = 1A,VGS = 10V |
| Turn-Off Delay Time | td(off) | 25.5 | ns | VDD = 15V, RG=3.3 Ω, ID = 1A,VGS = 10V |
| Turn-Off Fall Time | tf | 3.3 | ns | VDD = 15V, RG=3.3 Ω, ID = 1A,VGS = 10V |
| Input Capacitance | Ciss | 240 | pF | VDS = 15V, VGS = 0V, f = 1.0 MHz |
| Output Capacitance | Coss | 35 | pF | VDS = 15V, VGS = 0V, f = 1.0 MHz |
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS = 15V, VGS = 0V, f = 1.0 MHz |
| Source drain current(Body Diode) | ISD | 1.8 | A | |
| Diode Forward Voltage | VSD | 1.2 | V | ISD = 4.0A, VGS = 0V |
| Diode Forward Voltage | VSD | 0.85 | V | ISD = 1.8A, VGS = 0V |
2407101108_MDD-Microdiode-Semiconductor-AO3402_C427384.pdf
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