Power MOSFET 650V 20A N Channel Enhancement Mode Miracle Power MJF20N65 for High Voltage Switching and Control
Key Attributes
Model Number:
MJF20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
20A
RDS(on):
220mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
5.28pF
Number:
1 N-channel
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
33W
Input Capacitance(Ciss):
1.547nF
Gate Charge(Qg):
32.23nC@10V
Mfr. Part #:
MJF20N65
Package:
TO-220F
Product Description
Product Overview
The MJF20N65 is an N-Channel Power MOSFET manufactured by Miracle Technology Co., Ltd. Utilizing advanced Super Junction Technology, this MOSFET offers 650V breakdown voltage and 20A continuous drain current with a typical on-resistance of 0.19 at VGS = 10V. It is designed for easy gate switching control and operates in enhancement mode, featuring a gate threshold voltage (VGS(th)) between 2.8V and 4.2V. This component is well-suited for applications such as LED lighting, LCD & PDP TVs, power adaptors, boost PFC switches, and HB, AHB, or LLC topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MJF Series
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage | 650 | V | |||
| Current | 20 | A | |||
| RDS(ON) | VGS = 10V | 0.19 | |||
| Gate Threshold Voltage (VGS(th)) | 2.8 | 4.2 | V | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C | 650 | V | ||
| Gate-Source Voltage (VGS) | 30 | V | |||
| Drain Current-Continuous (ID) | TC = 25C | 20 | A | ||
| Drain Current-Pulsed (IDM) | b | 60 | A | ||
| Maximum Power Dissipation (PD) | @ TJ = 25C | 33 | W | ||
| Peak Diode Recovery dv/dt (dv/dt) | c | 15 | V/ns | ||
| Single Pulsed Avalanche Energy (EAS) | d | 605 | mJ | ||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 3.8 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 80 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 10mA | 655 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 10A | - | 0.19 | 0.22 | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | f = 1.0MHz | - | 11 | - | |
| Input Capacitance (Ciss) | VDS = 50V, VGS = 0V, f = 10kHz | - | 1547 | - | pF |
| Output Capacitance (Coss) | - | 134 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 5.28 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 400V, VGS = 13V, ID = 8A, RG= 3.4 | - | 12.4 | - | ns |
| Turn-On Rise Time (tr) | - | 21.6 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 52 | - | ns | |
| Turn-Off Fall Time (tf) | - | 18.8 | - | ns | |
| Gate-Source Charge (Qgs) | VDD = 400V, VGS = 0 to 10V, ID = 8A | - | 8.242 | - | nC |
| Gate-Drain Charge (Qgd) | - | 10.85 | - | nC | |
| Total Gate Charge (Qg) | - | 32.23 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IF = 1A | - | 0.72 | - | V |
| Body Diode Reverse Recovery Time (Trr) | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 275 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 3.809 | - | C |
| Peak reverse recovery current (Irrm) | VR = 400V, IF = 8A, dIF/dt = 100A/s | - | 25.6 | - | A |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 10mH, VDD = 50V, IAS = 11A, RG = 25 Starting TJ = 25 .
2408011701_MIRACLE-POWER-MJF20N65_C34373730.pdf
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