MCC SIL2308 TP Dual N P Channel MOSFET offering moisture sensitivity level 1 and halogen free option
Key Attributes
Model Number:
SIL2308-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A;4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
38mΩ@4.5V,4.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
125pF@8V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
800pF@8V
Pd - Power Dissipation:
-
Gate Charge(Qg):
11nC@4.5V;12nC@2.5V
Mfr. Part #:
SIL2308-TP
Package:
SOT-23-6L
Product Description
Product Overview
The SIL2308 is a Dual N&P-Channel MOSFET designed for various electronic applications. It offers low input/output leakage, exceptional ON resistance, and maximum DC current capability. The epoxy meets UL 94 V-0 flammability rating and the device is Moisture Sensitivity Level 1 compliant. Halogen-free options are available by adding the "-HF" suffix, and lead-free/RoHS compliant versions are designated with a "P" suffix.
Product Attributes
- Brand: MCCSEMI
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Available Halogen Free: Yes (with "-HF" suffix)
- RoHS Compliant: Yes (with "P" suffix)
Technical Specifications
General Characteristics
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current (N-Channel) | ID | 5 | A |
| Drain-Source Voltage (P-Channel) | VDS | -20 | V |
| Continuous Drain Current (P-Channel) | ID | -4 | A |
| Operating Junction Temperature Range | -55 to +150 | °C | |
| Storage Temperature Range | -55 to +150 | °C | |
| Maximum Thermal Resistance (Junction to Ambient) | 119 | °C/W |
N-Channel Electrical Characteristics @ 25°C
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | ±0.1 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.5 | 0.7 | 1 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =4.5A | 38 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3.5A | 45 | mΩ | ||
| Forward transconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage | VSD | IS=1.7A,VGS=0V | 0.7 | 1.3 | V | |
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =4A | 11 | nC | ||
| Gate-source charge | Qgs | 2.3 | nC | |||
| Gate-drain charge | Qgd | 2.5 | nC | |||
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | 800 | pF | ||
| Output Capacitance | Coss | 155 | pF | |||
| Reverse Transfer Capacitance | Crss | 125 | pF | |||
| Turn-on delay time | td(on) | VDD=10V , VGS=4V , ID=1A RG=10Ω | 18 | ns | ||
| Turn-on rise time | tr | 5 | ns | |||
| Turn-off delay time | td(off) | 43 | ns | |||
| Turn-off fall time | tf | 20 | ns |
P-Channel Electrical Characteristics @ 25°C
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -0.5 | -0.7 | -1 | V |
| Drain-source on-resistance | RDS(on) | VGS = -4.5V, ID = -0.5A | 70 | 90 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS = -2.5V, ID = -0.5A | 90 | 110 | mΩ | |
| Forward transconductance | gFS | VDS =-5V, ID = -2A | 5 | S | ||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | 405 | pF | ||
| Output Capacitance | Coss | 75 | pF | |||
| Reverse Transfer Capacitance | Crss | 55 | pF | |||
| Gate resistance | Rg | f =1MHz | 6 | Ω | ||
| Total Gate Charge | Qg | VDS =-10V,VGS =-2.5V,ID=-3A | 3.3 | 12 | nC | |
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qgd | 1.3 | nC | |||
| Turn-on delay time | td(on) | VDD=-10V,VGEN=-4.5V,ID=-1A RL=10Ω,RGEN=1Ω | 11 | ns | ||
| Turn-on rise time | tr | 35 | ns | |||
| Turn-off delay time | td(off) | 30 | ns | |||
| Turn-off fall time | tf | 10 | ns | |||
| Diode Forward voltage | VSD | VGS =0V, IS=-1.25A | -0.7 | -1.3 | V |
Dimensions
| DIM | INCHES | MM | TYP |
|---|---|---|---|
| A | 0.012 - 0.020 | 0.30 - 0.50 | |
| B | 0.051 - 0.070 | 1.30 - 1.80 | |
| C | 0.087 - 0.126 | 2.20 - 3.20 | |
| D | 0.106 - 0.122 | 2.70 - 3.10 | |
| G | 0.037 | 0.95 | |
| H | 0.074 | 1.90 | |
| J | 0.002 - 0.006 | 0.05 - 0.15 | |
| K | 0.030 - 0.051 | 0.75 - 1.30 | |
| L | 0.012 - 0.024 | 0.30 - 0.60 | |
| M | 0.003 - 0.008 | 0.08 - 0.22 |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SIL2308 | Tape&Reel: 3Kpcs/Reel | -TP |
Note: Adding "-HF" suffix for halogen free, e.g. Part Number-TP-HF
2008031237_MCC-SIL2308-TP_C669010.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
