Power Switching N Channel MOSFET MIRACLE POWER MPQ50N25 with 250V Breakdown Voltage and Low Crss
Key Attributes
Model Number:
MPQ50N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
50A
RDS(on):
70mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
463pF
Input Capacitance(Ciss):
3.35nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
MPQ50N25
Package:
TO-247
Product Description
MPQ50N25 N-Channel Power MOSFET
The MPQ50N25 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance power switching applications. It features a 250V breakdown voltage, a continuous drain current of 50A, and a low on-resistance of 54m (typ.) at 10V VGS. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPQ Series
- Technology: Miracle Technology
- Channel Type: N-Channel
- Package: TO-247-3L
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 250 | V | |||
| Gate-Source Voltage (VGS) | 30 | V | |||
| Drain Current-Continuous (ID) @ TC=25C | 50 | A | |||
| Drain Current-Continuous (ID) @ TC=100C | 31 | A | |||
| Drain Current-Pulsed (IDM) | b | 200 | A | ||
| Maximum Power Dissipation (PD) @ TJ=25C | 300 | W | |||
| Peak Diode Recovery dv/dt (dv/dt) | c | 5.0 | V/ns | ||
| Single Pulsed Avalanche Energy (EAS) | d | 1125 | mJ | ||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 0.42 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 40 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 250 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 250V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID =250A | 2 | 4 | - | V |
| On Characteristics | |||||
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 25A | - | 54 | 70 | m |
| Forward Transconductance (gfs) | VDS=15V, ID=50A | - | 25 | - | S |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 3350 | - | pF |
| Output Capacitance (Coss) | - | 463 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 33 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 125V, ID =50A, VGS=10V | - | 50 | - | ns |
| Turn-On Rise Time (tr) | - | 179 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 83 | - | ns | |
| Turn-Off Fall Time (tf) | - | 89 | - | ns | |
| Total Gate Charge (Qg) | VDS = 200V, ID =50A, VGS = 10V | - | 64 | - | nC |
| Gate-Source Charge (Qgs) | - | 21.5 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 26 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | - | - | 50 | A | |
| Maximum Pulsed Current (ISM) | - | - | 200 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 50A | - | - | 1.5 | V |
| Body Diode Reverse Recovery Time (Trr) | IS=50A,VGS = 0V, dIF/dt=100A/us | - | 242 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IS=50A,VGS = 0V, dIF/dt=100A/us | - | 2790 | - | nC |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD =50A, dIF/dt 100A/us,VDDBVDS, Start TJ=25
d. L = 10mH, VDD=50V,IAS = 15A,RG=25 Starting TJ=25 .
2408011701_MIRACLE-POWER-MPQ50N25_C34373715.pdf
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