High frequency switching rectifier MICROCHIP APT30DQ100BG diode for motor controllers and inverters
Key Attributes
Model Number:
APT30DQ100BG
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@1000V
Reverse Recovery Time (trr):
295ns
Voltage - DC Reverse (Vr) (Max):
1kV
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
3V@30A
Current - Rectified:
30A
Mfr. Part #:
APT30DQ100BG
Package:
TO-247
Product Description
Product Overview
The APT30DQ100BG is an ultrafast soft recovery rectifier diode designed for high-frequency switching applications. It offers low forward voltage, low leakage current, and avalanche energy rating, making it suitable for power factor correction, switch-mode power supplies, inverters, converters, and motor controllers. Its benefits include high switching frequency, low switching losses, reduced EMI, higher reliability, and increased system power density.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant, AEC-Q101 qualified
Technical Specifications
| Parameter | Rating | Unit | Conditions |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Maximum DC reverse voltage (VR) | 1000 | V | |
| Maximum peak repetitive reverse voltage (VRRM) | 1000 | V | |
| Maximum working peak reverse voltage (VRWM) | 1000 | V | |
| Maximum average forward current (IF(AV)) | 30 | A | TC = 102 C, duty cycle = 0.5 |
| RMS forward current (IF(RMS)) | 43 | A | |
| Non-repetitive forward surge current (IFSM) | 150 | A | TJ = 45 C, 8.3 ms |
| Avalanche energy (EAVL) | 20 | mJ | 1 A, 40 mH |
| Operating and storage temperature range (TJ, TSTG) | 55 to 175 | C | |
| Lead temperature for 10 s (TL) | 300 | C | |
| Electrical Performance | |||
| Forward voltage (VF) | 2.5 - 3.0 | V | IF = 30 A |
| Forward voltage (VF) | 3.06 | V | IF = 60 A |
| Forward voltage (VF) | 1.92 | V | IF = 30 A, TJ = 125 C |
| Maximum reverse leakage current (IRM) | 100 | A | VR = 1000 V |
| Maximum reverse leakage current (IRM) | 500 | A | VR = 1000 V, TJ = 125 C |
| Junction capacitance (CT) | 26 | pF | VR = 200 V |
| Dynamic Characteristics | |||
| Reverse recovery time (trr) | 24 | ns | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C |
| Reverse recovery time (trr) | 295 | ns | IF = 30 A, di/dt = 200 A/s, VR = 667 V, TC = 25 C |
| Reverse recovery charge (Qrr) | 440 | nC | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C |
| Maximum reverse recovery current (IRRM) | 4 | A | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C |
| Reverse recovery time (trr) | 330 | ns | IF = 30 A, di/dt = 200 A/s, VR = 667 V, TC = 125 C |
| Reverse recovery charge (Qrr) | 1550 | nC | IF = 30 A, di/dt = 200 A/s, VR = 667 V, TC = 125 C |
| Maximum reverse recovery current (IRRM) | 8 | A | IF = 30 A, di/dt = 200 A/s, VR = 667 V, TC = 125 C |
| Reverse recovery time (trr) | 150 | ns | IF = 30 A, di/dt = 1000 A/s, VR = 667 V, TC = 125 C |
| Reverse recovery charge (Qrr) | 2250 | nC | IF = 30 A, di/dt = 1000 A/s, VR = 667 V, TC = 125 C |
| Maximum reverse recovery current (IRRM) | 25 | A | IF = 30 A, di/dt = 1000 A/s, VR = 667 V, TC = 125 C |
| Thermal and Mechanical Characteristics | |||
| Junction-to-case thermal resistance (RJC) | 0.80 | C/W | |
| Package weight (WT) | 0.22 | oz | |
| Package weight (WT) | 5.9 | g | |
| Maximum mounting torque | 10 | lb-in | |
| Maximum mounting torque | 1.1 | N-m | |
2504101957_MICROCHIP-APT30DQ100BG_C17351670.pdf
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