Low Crss N Channel MOSFET MIRACLE POWER MPF12N80 800V 12A Fast Switching and Avalanche Tested Device
Key Attributes
Model Number:
MPF12N80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11.4pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.764nF
Output Capacitance(Coss):
224pF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
51.1nC@10V
Mfr. Part #:
MPF12N80
Package:
TO-220F
Product Description
Product Overview
The MPF12N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This device features high voltage capability (800V), a continuous drain current of 12A, and a low on-resistance of 0.68 (typ.) at VGS = 10V. It is designed with low Crss and fast switching characteristics, and is 100% avalanche tested. Applications include chargers and LED power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Technology: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | 0.68 | (RDS(ON)@VGS=10V) | ||||
| Voltage | 800 | V | ||||
| Current | 12 | A | ||||
| Features | Low Crss, Fast Switching, 100% Avalanche Tested | |||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 800 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 12 | A | |||
| ID | Drain Current-Continuous, TC =100C | 7.5 | A | |||
| IDM | Drain Current-Pulsed | b | 48 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 42 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 1620 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. | 2.98 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Max. | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 800 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 800V, VGS = 0V | - | - | 25 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 10 | A |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | c VGS = 10V, ID =6A | - | 0.68 | 0.9 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2764 | - | pF |
| Coss | Output Capacitance | - | 224 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 11.4 | - | pF | |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =12A, RG = 10,VGS=10V | - | 29.4 | - | ns |
| tr | Turn-On Rise Time | - | 39.6 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 29 | - | ns | |
| tf | Turn-Off Fall Time | - | 40 | - | ns | |
| Qg | Total Gate Charge | VDS = 640V, ID =12A, VGS = 10V | - | 51.1 | - | nC |
| Qgs | Gate-Source Charge | - | 12.4 | - | nC | |
| Qgd | Gate-Drain Charge | - | 16.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 12 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 48 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 12A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=12A,Tj = 25 dIF/dt=100A/us, VGS=0V | - | 721 | - | ns |
| Qrr | Reverse Recovery Charge | - | 8650 | - | nC | |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width300us; duty cycle2%
d. L=10mH, VDD=50V,Ias=18A,RG=25 Starting TJ=25
2410122015_MIRACLE-POWER-MPF12N80_C17701997.pdf
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