MDD Microdiode Semiconductor MDD2306 30V N Channel MOSFET Designed for DC DC Converter Applications
Key Attributes
Model Number:
MDD2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
240pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6nC
Mfr. Part #:
MDD2306
Package:
SOT-23
Product Description
Product Overview
The MDD2306 is a 30V N-Channel Enhancement Mode MOSFET featuring an advanced trench process technology and high-density cell design for ultra-low on-resistance. It is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | 5.0 | A | ||
| Power Dissipation (Note 2) | PD | TA=25 | 1.5 | W | ||
| Thermal Resistance from Junction to Ambient (Note 2) | RJA | TA=25 | 80 | /W | ||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current (Note 1) | IDM | 20.4 | A | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Drain-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.0 | 2.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=4A | 28 | 36 | m | |
| VGS=4.5V, ID=3A | 38 | 50 | m | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 240 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | 35 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 30 | pF | ||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=4A | 6 | nC | ||
| Gate Source Charge | Qgs | VDS=15V, VGS=10V, ID=4A | 0.5 | nC | ||
| Gate Drain Charge | Qgd | VDS=15V, VGS=10V, ID=4A | 1.3 | nC | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=15V, VGS=10V, ID=1A, RG=3.3 | 4.4 | ns | ||
| Turn on Rise Time | tr | VDS=15V, VGS=10V, ID=1A, RG=3.3 | 2.6 | ns | ||
| Turn Off Delay Time | td(off) | VDS=15V, VGS=10V, ID=1A, RG=3.3 | 25.5 | ns | ||
| Turn Off Fall Time | tf | VDS=15V, VGS=10V, ID=1A, RG=3.3 | 3.3 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | 1.8 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | 0.85 | 1.2 | V | |
2411211951_MDD-Microdiode-Semiconductor-MDD2306_C427393.pdf
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