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quality RoHS Compliant P Channel MOSFET MCC MCT04P06 TP with UL 94 V 0 Flammability Rating and Surface Mount factory
quality RoHS Compliant P Channel MOSFET MCC MCT04P06 TP with UL 94 V 0 Flammability Rating and Surface Mount factory

RoHS Compliant P Channel MOSFET MCC MCT04P06 TP with UL 94 V 0 Flammability Rating and Surface Mount

Key Attributes
Model Number: MCT04P06-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
60mΩ@10V,3.1A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
60pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
650pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
MCT04P06-TP
Package:
SOT-223-4
Product Description

Product Overview

The MCT04P06 is a P-Channel MOSFET designed for various applications. It features a lead-free finish and is RoHS compliant, with an epoxy meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. Halogen-free options are available upon request. This MOSFET operates within a junction temperature range of -55C to +150C and a storage temperature range of -55C to +150C, with a thermal resistance of 62.5C/W (Junction to Ambient). It is suitable for surface mounting on FR4 boards.

Product Attributes

  • Brand: MCCSemi
  • Product Type: P-Channel MOSFET
  • RoHS Compliant: Yes (indicated by "P" suffix)
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Halogen Free: Available upon request (by adding "-HF" suffix)
  • Packaging: Tape & Reel (2.5Kpcs/Reel)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Total Power Dissipation PD 2.0 W
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (Note 1) ID -3.5 A
Pulsed Drain Current (Note 2) IDM -14 A
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance (Junction to Ambient) 62.5 °C/W
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA -60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -1 µA
Gate-Threshold Voltage (Note 2) VGS(th) VDS=VGS, ID=-250µA -1 -1.5 -3 V
Drain-Source On-Resistance (Note 2) RDS(on) VGS=-10V, ID=-3.1A 60 80 mΩ
VGS=-4.5V, ID=-0.2A 92 100 mΩ
Diode Forward Voltage VSD VGS=0V, IS=-2A 1.2 V
Forward Tranconductance (Note 2) gFS VDS=-15V, ID=-3.1A 8.5 S
Dynamic Characteristics (Note 3)
Input Capacitance Ciss VDS=-15V,VGS=0V,f=1MHz 650 pF
Output Capacitance Coss 95 pF
Reverse Transfer Capacitance Crss 60 pF
Gate Resistance Rg f=1MHz 20 Ω
Switching Characteristics (Note 3,4)
Total Gate Charge Qg VDD=-30V,VGS=-4.5V,ID=-3.1A 12 nC
Gate-Source Charge Qgs 2.2 nC
Gate-Drain Charge Qg 3.7 nC
Turn-On Delay Time td(on) VDD =-30V, VGEN=-4.5V, ID=-2.4A RL=12.5Ω, RG=1Ω 45 ns
Turn-On Rise Time tr 105 ns
Turn-Off Delay Time td(off) 60 ns
Turn-Off Fall Time tf 45 ns
Dimensions (SOT-223)
Dimension Inches MM Note Min Max Min Max
A 0.248 0.264 6.30 6.70
B 0.130 0.146 3.30 3.70
C 0.264 0.287 6.70 7.30
D 0.001 0.004 0.02 0.10
E 0.114 0.122 2.90 3.10
F 0.071 1.80
G 0.009 0.014 0.23 0.35
H 0.030 0.75
J 0.091 TYP. 2.30 TYP.
K 0.026 0.033 0.66 0.84

2008182139_MCC-MCT04P06-TP_C725524.pdf

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