power control MCC MCG20N08-TP N Channel MOSFET with Split Gate Trench technology and RoHS compliance
Key Attributes
Model Number:
MCG20N08-TP
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
9.7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
26pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
1.396nF@40V
Pd - Power Dissipation:
20.8W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
MCG20N08-TP
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The MCG20N08 is an N-Channel MOSFET featuring Split Gate Trench MOSFET Technology, designed for efficient power management. It offers a low thermal resistance and operates within a wide temperature range of -55C to +150C. This MOSFET meets UL 94 V-0 flammability rating and is available in a lead-free finish, with a halogen-free option upon request. Its robust design and high performance make it suitable for various industrial applications requiring reliable switching and power handling capabilities.Product Attributes
- Brand: MCC (Micro Commercial Components)
- Technology: Split Gate Trench MOSFET
- Flammability Rating: UL 94 V-0
- Compliance: Lead Free Finish/RoHS Compliant
- Halogen Free: Available Upon Request (by adding "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Note 1 | 20.8 | A | ||
| Pulsed Drain Current | IDM | Note 2 | 132 | A | ||
| Total Power Dissipation | PD | 132 | W | |||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance | Rth(j-c) | Junction to Case | 6 | C/W | ||
| Electrical Characteristics @ 25C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 80 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=64V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 4 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | 9.7 | 12 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS=6V, ID=10A | 14.5 | 18 | m | |
| Continuous Body Diode Current | IS | 20 | A | |||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 1.3 | V | ||
| Diode Characteristics | ||||||
| Reverse Recovery Time | trr | IS=20A,di/dt=100A/s | 40 | ns | ||
| Reverse Recovery Charge | Qrr | 41 | nC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V,VGS=0V,f=1MHz | 1396 | pF | ||
| Output Capacitance | Coss | 202 | pF | |||
| Reverse Transfer Capacitance | Crss | 26 | pF | |||
| Total Gate Charge | Qg | VDS=40V, VGEN=10V, RG=4.5, RL=2, IDS=20A | 24 | nC | ||
| Gate-Source Charge | Qgs | 8.2 | nC | |||
| Gate-Drain Charge | Qg | 5.8 | nC | |||
| Turn-On Delay Time | td(on) | 8.8 | ns | |||
| Turn-On Rise Time | tr | 26 | ns | |||
| Turn-Off Delay Time | td(off) | 16 | ns | |||
| Turn-Off Fall Time | tf | 18 | ns | |||
| Package Dimensions (DFN3333) | ||||||
| Dimension | Inches | MM | Note | |||
| A | 0.126 - 0.130 | 3.20 - 3.30 | ||||
| B | 0.126 - 0.130 | 3.20 - 3.30 | ||||
| C | 0.030 - 0.033 | 0.75 - 0.85 | ||||
| C1 | 0.007 - 0.009 | 0.18 - 0.22 | ||||
| C2 | --- - 0.002 | --- - 0.05 | ||||
| D | 0.071 - 0.079 | 1.80 - 2.00 | ||||
| E | 0.087 - 0.098 | 2.20 - 2.50 | ||||
| F | 0.010 - 0.014 | 0.25 - 0.35 | ||||
| G | 0.012 - 0.016 | 0.30 - 0.40 | ||||
| H | 0.016 - 0.020 | 0.40 - 0.50 | ||||
| e | 0.024 - 0.028 | 0.60 - 0.70 | ||||
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| MCG20N08 | Tape&Reel: 3Kpcs/Reel | -TP |
| Note: Adding "-HF" Suffix for Halogen Free, e.g. Part Number-TP-HF | ||
2008182104_MCC-MCG20N08-TP_C725259.pdf
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