Durable P Channel Enhancement Mode MOSFET MIRACLE POWER MU0003D with Continuous Drain Current of 20A
Key Attributes
Model Number:
MU0003D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
RDS(on):
120mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Input Capacitance(Ciss):
3.688nF
Output Capacitance(Coss):
91pF
Pd - Power Dissipation:
79W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MU0003D
Package:
TO-252
Product Description
Product Overview
The MU0003D is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers robust performance with a drain-source voltage of -100V and a continuous drain current of -20A. Key features include low gate charge, high UIS and DVDS testing, and a lead-free product acquisition. It is ideally suited for applications such as load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: P-Channel Enhancement Mode MOSFET
- Product Series: MU0003D
- Compliance: Lead free product acquired
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | -20 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | -15 | A | |||
| IDM | Drain Current-Pulsed | -80 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 79 | W | |||
| EAS | Single Pulsed Avalanche Energy | 138 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.9 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | C/W | ||||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = -100V, VGS = 0V | - | - | -1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250A | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -10V, ID = -15A | - | 90 | 120 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -4.5V, ID = -10A | - | 93 | 124 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | - | - | |
| Ciss | Input Capacitance | VDS = -50V, VGS = 0V, f = 1.0MHz | - | 3688 | - | pF |
| Coss | Output Capacitance | - | 91 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 31 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = -50V, VGS = -10V, RL = 5.0, RGEN = 9.1 | - | 6.0 | - | ns |
| tr | Turn-On Rise Time | - | 29 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 17 | - | ns | |
| tf | Turn-Off Fall Time | - | 24 | - | ns | |
| Qg | Total Gate Charge | VDS = -50V, VGS = -10V, ID = -10A | - | 72 | - | nC |
| Qgs | Gate-Source Charge | - | 8.4 | - | - | |
| Qgd | Gate-Drain Charge | - | 17.3 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | -20 | A |
| ISM | Maximum Pulsed Current | - | - | -80 | - | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -10A | - | - | -1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = -10A, dIF/dt = -100A/s | - | 32 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = -10A, dIF/dt = -100A/s | - | 53 | - | nC |
2504151445_MIRACLE-POWER-MU0003D_C47361198.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
