Power Management MOSFET MIRACLE POWER MU3011X with Advanced Trench Technology and 60A Drain Current
Key Attributes
Model Number:
MU3011X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
RDS(on):
6.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Output Capacitance(Coss):
264pF
Input Capacitance(Ciss):
2.247nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
MU3011X
Package:
PDFN-8L(3.3x3.3)
Product Description
Product Overview
The MU3011X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a 30V drain-source voltage and a continuous drain current of 60A at 25C, with a low typical RDS(ON) of 3.6m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, making it suitable for applications such as load switches, PWM applications, and power management. It is 100% EAS guaranteed for reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Channel Type: N-Channel Enhancement Mode
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 30 | V |
| VGS | Gate-Source Voltage | - | - | 20 | V | |
| ID | Drain Current-Continuous | TC = 25C | - | - | 60 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | 38 | A |
| IDM | Drain Current-Pulsed | - | - | 240 | A | |
| PD | Maximum Power Dissipation | @ TJ =25C | - | - | 39 | W |
| EAS | Single Pulsed Avalanche Energy | d | - | - | 121 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 3.2 | - | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 41 | - | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A | - | 3.6 | 4.6 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A | - | 5.0 | 6.5 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1MHz | - | 2247 | - | pF |
| Coss | Output Capacitance | - | 264 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 220 | - | pF | |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3 | - | 8 | - | ns |
| tr | Turn-On Rise Time | - | 16 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 40 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 30A | - | 45 | - | nC |
| Qgs | Gate-Source Charge | - | 8.1 | - | - | |
| Qgd | Gate-Drain Charge | - | 10.2 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 60 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 240 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 0.8 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 30A, di/dt = 100A/s | - | 12 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 30A, di/dt = 100A/s | - | 3.6 | - | nC |
| Package Information | ||||||
| Package Type | PDFN3x3 | |||||
| Symbol | Min | Typ | Max | |||
| A | 0.725 | 0.775 | 0.825 | |||
| B | 0.28 | 0.38 | 0.48 | |||
| C | 0.13 | 0.15 | 0.20 | |||
| D | 3.05 | 3.15 | 3.25 | |||
| D1 | 0.10 | - | - | |||
| E | 3.25 | 3.35 | 3.45 | |||
| E1 | 3.0 | 3.1 | 3.2 | |||
| e | 0.60 | 0.65 | 0.70 | |||
| F | 0.25 | 0.30 | 0.35 | |||
| H | 1.63 | 1.73 | 1.83 | |||
| L | 2.35 | 2.45 | 2.55 | |||
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = 25V, IAS = 22A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.
2504151445_MIRACLE-POWER-MU3011X_C47361163.pdf
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