Power MOSFET Megain MGH038N10N featuring TO263 package low on resistance and high drain source voltage
Key Attributes
Model Number:
MGH038N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@50V
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
4.725nF@50V
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MGH038N10N
Package:
TO-263
Product Description
Product Overview
The MGH038N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS Guaranteed. It is designed for high-frequency switching and synchronous rectification applications, including motor drivers and Battery Management Systems (BMS). This green device is available in a TO263 package.
Product Attributes
- Brand: Megain
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Order Code | Package | VDS (V) | ID (A) | RDS(ON) (m) | EAS (mJ) | PD (W) |
| MGH038N10N | TO263 | 100 | 120 | <4.5 (Typ: 3.8 at VGS=10V) | 702 | 250 (TC=25C) |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, ID=30A | - | 3.8 | 4.5 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=30A | - | 50 | - | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | - | 1 | - | |
| Qg | Total Gate Charge (10V) | VDS=50V, VGS=10V ID=20A | - | 72 | - | nC |
| Qgs | Gate-Source Charge | - | - | 28 | - | - |
| Qgd | Gate-Drain Charge | - | - | 15 | - | - |
| Td(ON) | Turn-on Delay Time | VDS=50V, VGS=10V, RG=3, ID=20A | - | 35 | - | nS |
| Tr | Turn-on Rise Time | - | - | 18 | - | - |
| Td(OFF) | Turn-off Delay Time | - | - | 45 | - | - |
| Tf | Turn-off Fall Time | - | - | 55 | - | - |
| Ciss | Input Capacitance | VDS=50V, VGS=0V, F=1MHz | - | 4725 | - | pF |
| Coss | Output Capacitance | - | - | 609 | - | - |
| Crss | Reverse Transfer Capacitance | - | - | 14 | - | - |
| IS | Continuous Source Current | VG=VD=0V,Force Current | - | - | 120 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | - | - | 1.3 | V |
| trr | Reverse Recovery Time | IF=30A, dlF/dt=100A/us | - | 70 | - | nS |
| Qrr | Reverse Recovery Charge | - | - | 170 | - | nC |
| Symbol | Parameter | Value | Units |
| RJA | Thermal Resistance Junction to Ambient | 62 | /W |
| RJC | Thermal Resistance Junction to Case | 0.5 | /W |
2410121546_Megain-MGH038N10N_C22396272.pdf
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