N Channel MOSFET with 650V drain source voltage 8A current and low on resistance MIRACLE POWER MJD08N65
Key Attributes
Model Number:
MJD08N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.6pF
Input Capacitance(Ciss):
599pF
Output Capacitance(Coss):
76pF
Pd - Power Dissipation:
80W
Gate Charge(Qg):
8nC@13V
Mfr. Part #:
MJD08N65
Package:
TO-252
Product Description
Product Overview
MJD08N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology. It offers a 650V drain-source voltage, 8A continuous drain current, and a typical on-resistance of 0.50 at VGS = 10V. Designed for easy gate switching control and 100% avalanche tested, this MOSFET is suitable for applications such as PD adaptors, LCD & PDP TVs, LED lighting, and in boost PFC switch, single-ended flyback, or two-transistor forward topologies.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | 0.50 | (RDS(ON)) | |||
| Voltage | 650 | V (VDS) | ||||
| Current | TC = 25C | 8 | A (ID) | |||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 8 | A | ||
| IDM | Drain Current-Pulsed | 24 | A | |||
| PD | Maximum Power Dissipation | @ TJ = 25C | 80 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | d | 211 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.56 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | 4.2 | V | |
| RDS(on) | Static Drain-Source On-Resistance | c VGS = 10V, ID = 4.0 A | 0.50 | 0.55 | ||
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | 25 | |||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | 599 | pF | ||
| Coss | Output Capacitance | 76 | pF | |||
| Crss | Reverse Transfer Capacitance | 3.6 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =3A, VGS=13V, RG=6.8 | 26.8 | ns | ||
| tr | Turn-On Rise Time | 24.8 | ns | |||
| td(off) | Turn-Off Delay Time | 127.6 | ns | |||
| tf | Turn-Off Fall Time | 21.2 | ns | |||
| Qg | Total Gate Charge | VDS = 400V, ID =3A, VGS = 10V | 8.0 | nC | ||
| Qgs | Gate-Source Charge | 2.6 | - | |||
| Qgd | Gate-Drain Charge | 1.7 | - | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 8 | A | ||
| ISM | Maximum Pulsed Current | VGS = 0V | 24 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | 0.76 | V | ||
| Trr | Body Diode Reverse Recovery Time | IS=3A,VGS = 0V dIF/dt=100A/s | 174 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | IS=3A,VGS = 0V dIF/dt=100A/s | 1.2 | C | ||
2504101957_MIRACLE-POWER-MJD08N65_C47361154.pdf
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