Low RDS ON MOSFET Megain MGC036N04L designed for synchronous rectification and DC DC power conversion
Key Attributes
Model Number:
MGC036N04L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Number:
1 N-channel
Output Capacitance(Coss):
475pF
Pd - Power Dissipation:
46W
Input Capacitance(Ciss):
14pF
Gate Charge(Qg):
16nC@4.5V
Mfr. Part #:
MGC036N04L
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC036N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering low RDS(ON) and guaranteed 100% EAS. It is designed for applications such as SMPS Synchronous Rectification, DC/DC Converters, and Or-ing.
Product Attributes
- Brand: Megain
- Product Code: MGC036N04L
- Green Device Available: Yes
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Voltage | VGS=0V, ID=250uA | 40 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, ID=20A | - | 3.6 | 4.2 | m |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, ID=20A | - | 5.1 | 6.0 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| ID | Continuous Drain Current, VGS @ 10V (TC=25) | - | - | 50 | A | |
| ID | Continuous Drain Current, VGS @ 10V (TC=100) | - | - | 50 | A | |
| ID | Continuous Drain Current, VGS @ 10V (TA=25) | - | - | 17.5 | A | |
| ID | Continuous Drain Current, VGS @ 10V (TA=70) | - | - | 14 | A | |
| IDM | Pulsed Drain Current | - | - | 200 | A | |
| EAS | Single Pulse Avalanche Energy | - | 105 | - | mJ | |
| IAS | Avalanche Current | - | 46 | - | A | |
| PD | Total Power Dissipation (TC=25C) | - | - | 46 | W | |
| RJA | Thermal Resistance Junction to Ambient | - | 62 | - | /W | |
| RJC | Thermal Resistance Junction to Case | - | 2.7 | - | /W | |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| Qg | Total Gate Charge | VDS=20V, VGS=4.5V ID=20A | - | 16 | - | nC |
| Ciss | Input Capacitance | VDS=20V, VGS=0V, F=1MHz | - | 1523 | - | pF |
| Coss | Output Capacitance | - | 475 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 67 | - | pF | |
| IS | Continuous Source Current | VG=VD=0V,Force Current | - | - | 50 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=1A | - | - | 1.2 | V |
| TSTG | Storage Temperature Range | -55 | - | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | - | 150 |
2411220027_Megain-MGC036N04L_C41380432.pdf
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