Energy MIRACLE POWER MS8002C N Channel Enhancement Mode MOSFET with low gate charge and halogen free design
Key Attributes
Model Number:
MS8002C
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Pd - Power Dissipation:
173W
Output Capacitance(Coss):
1.048nF
Input Capacitance(Ciss):
3.503nF
Gate Charge(Qg):
51nC@10V
Mfr. Part #:
MS8002C
Package:
TO-220
Product Description
MS8002C N-Channel Enhancement Mode MOSFET
The MS8002C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features ultra-low RDS(ON) and low gate charge, making it ideal for efficient power management. This MOSFET is 100% EAS guaranteed, halogen-free, and RoHS-compliant, ensuring reliability and environmental responsibility.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET
- Certifications: Halogen Free, RoHS-Compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | RDS(ON)(Typ.) = 4.6m@VGS = 10V | 85 | 120 | V, A, m | ||
| Ultra-low RDS(ON) and Low Gate Charge | ||||||
| 100% EAS Guaranteed | ||||||
| Application | ||||||
| Load Switching, Quick/Wireless Charging, Motor Driving | ||||||
| Current Switching in DC/DC & AC/DC (SR) Sub Systems | ||||||
| Power Management in Computing, Communications | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 85 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 120 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 78 | A | ||
| IDM | Drain Current-Pulsed | 480 | A | |||
| PD | Maximum Power Dissipation | @ TJ = 25C | 173 | W | ||
| EAS | Single Pulsed Avalanche Energy | 361 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.72 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 85 | 91 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 80V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 4.6 | 5.5 | m |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | VDS = 0V, VGS = 0V, f = 1MHz | - | 1.5 | - | |
| Ciss | Input Capacitance | VDS = 40V, VGS = 0V, f = 1MHz | - | 3503 | - | pF |
| Coss | Output Capacitance | - | 1048 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 23 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 40V, VGS = 10V, RL = 2, RGEN = 3 | - | 15 | - | ns |
| tr | Turn-On Rise Time | - | 23 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 31 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDD = 40V, VGS = 0 to 10V, ID = 20A | - | 51 | - | nC |
| Qgs | Gate-Source Charge | - | 20 | - | nC | |
| Qgd | Gate-Drain Charge | - | 10 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | - | - | 120 | A | |
| ISM | Maximum Pulsed Current | - | - | 480 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | - | 0.7 | 1 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 15A, diF/dt = 100A/s | - | 57 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, diF/dt = 100A/s | - | 91 | - | nC |
Notes:
- a. TJ = +25 to +150
- b. Repetitive rating; pulse width limited by maximum junction temperature.
- c. L = 0.5mH, VDD = 50V, IAS = 38A, RG = 25 Starting TJ = 25 .
- d. Pulse width 300s; duty cycle 2%.
Package Information: TO-220
2504151445_MIRACLE-POWER-MS8002C_C47361103.pdf
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