MDD Microdiode Semiconductor MMBT3904E NPN transistor in compact SOT23 package for versatile switching
Key Attributes
Model Number:
MMBT3904-E
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904-E
Package:
SOT-23
Product Description
Product Overview
The MMBT3904-E is a general-purpose NPN bipolar transistor in a SOT-23 package. It is designed for a wide range of switching and amplification applications.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Transistor Type: NPN
- Construction: Epitaxial Planar Die
- Complementary Type: MMBT3906 (PNP)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICEX | CE V =30V, VEB(off)=3V | 50 | nA | ||
| Collector Cut-off Current | ICBO | CB V = 60V, IE=0 | 100 | nA | ||
| Emitter Cut-off Current | IEBO | EB V =5V, IC=0 | 100 | nA | ||
| DC Current Gain | hFE | VCE=1V, IC=10mA | 100 | 200 | ||
| VCE=1V, IC=50mA | 100 | |||||
| VCE=1V, IC=100mA | 60 | |||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=50mA, IB=5mA | 0.5 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=50mA, IB=5mA | 1.1 | V | ||
| Transition Frequency | fT | CE V =20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Delay Time | td | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | ns | ||
| Rise Time | tr | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | ns | ||
| Storage Time | ts | CC V =3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| Fall Time | tf | CC V =3V, IC=10mA, IB1= IB2=1mA | 50 | ns |
2411131351_MDD-Microdiode-Semiconductor-MMBT3904-E_C41371422.pdf
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