NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current and SOT23 package type
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
S8050 TRANSISTOR (NPN)
The S8050 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a continuous collector current of 500 mA and a collector power dissipation of 300 mW. It is complementary to the S8550 transistor.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | 40 | V | ||
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | 25 | V | ||
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | 5 | V | ||
| Collector Current-Continuous | IC | (Ta=25 unless otherwise noted) | 500 | mA | ||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 300 | mW | ||
| Junction Temperature | Tj | (Ta=25 unless otherwise noted) | 150 | |||
| Storage Temperature | Tstg | (Ta=25 unless otherwise noted) | -55 | 150 | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=50mA | 120 | 400 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC=20mA, f=30MHz | 150 | MHz | ||
| DC current gain | hFE(2) | VCE=1V, IC=500mA | 50 | |||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A |
2411211950_MDD-Microdiode-Semiconductor-S8050_C364312.pdf
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