MDD Microdiode Semiconductor MMBT3906 PNP Transistor SOT523 Package Ideal for Switching Applications
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
Product Overview
The MMBT3906T is a PNP bipolar transistor in a SOT-523 package, designed for medium power amplification and switching applications. It serves as a complementary device to the MMBT3904T, offering a small surface mount package ideal for compact electronic designs.
Product Attributes
- Brand: Microdiode
- Complementary to: MMBT3904T
- Package Type: SOT-523
- Encapsulation: Plastic
- Marking: 3N
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | 0.15 | W | |||
| Thermal Resistance (Junction to Ambient) | RJA | 833 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | CI =-10A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | CI =-1mA, IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | EI =-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | CB V =-40V, IE=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | EB V =-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-0.1mA | 60 | |||
| hFE(2) | VCE=-1V, IC=-1mA | 80 | ||||
| hFE(3) | VCE=-1V, IC=-10mA | 300 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA, IB=-1mA | -0.25 | V | ||
| VCE(sat)2 | IC=-50mA, IB=-5mA | -0.40 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA, IB=-1mA | -0.85 | V | ||
| VBE(sat)2 | IC=-50mA, IB=-5mA | -0.95 | V | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA,f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V,IE=0,f=1MHz | 4.5 | pF | ||
| Collector cut-off current | ICEX | VCE=-1V, IC=-50mA | -50 | nA | ||
| ICEX | VCE=-2V, IC=-100mA | -100 | nA | |||
| DC current gain | hFE(4) | VCE=-1V, IC=-50mA | 60 | |||
| hFE(5) | VCE=-2V, IC=-100mA | 30 | ||||
| Input capacitance | Cib | VCE=-5V,IC=0.1mA | 10 | pF | ||
| Noise Figure | NF | VCC=-3V, VBE(off)=-0.5V | 4 | dB | ||
| Transition time | td | IC=-10mA, IB1=-1mA | 35 | ns | ||
| Rise time | tr | VCC=-3V, IC=-10mA, IB1=IB2-1mA | 35 | ns | ||
| Storage time | ts | VCE=-30V,VEB(off)=-3V | 75 | ns | ||
| Fall time | tf | 225 | ns |
2411211939_MDD-Microdiode-Semiconductor-MMBT3906_C364311.pdf
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