Microchip TP0620N3 G P Channel Vertical DMOS FET with Low Input Capacitance and High Switching Speed
Key Attributes
Model Number:
TP0620N3-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7Ω@10V,200mA
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Input Capacitance(Ciss):
85pF
Pd - Power Dissipation:
1W
Mfr. Part #:
TP0620N3-G
Package:
TO-92-3
Product Description
Product Overview
The TP0620 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a low threshold voltage, high input impedance, low input capacitance, and fast switching speeds, making it ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecommunication switches. Its vertical DMOS structure offers the power handling capabilities of bipolar transistors with the advantages of MOS devices, including freedom from thermal runaway and secondary breakdown.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Silicon-gate manufacturing process
- Package Type: 3-lead TO-92
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 2 mA | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 4.5 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | ||
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current (at 125C) | IDSS | 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.25 | A | VGS = 5V, VDS = 25V | ||
| On-State Drain Current | ID(ON) | 0.75 | A | VGS = 10V, VDS = 25V | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 9 | 15 | VGS = 5V, ID = 100 mA | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 7 | 12 | VGS = 10V, ID = 200 mA | ||
| Change in RDS(ON) with Temperature | RDS(ON) | 1.7 | %/C | VGS = 10V, ID = 200 mA (Note 1) | ||
| Forward Transconductance | GFS | 100 | 150 | mmho | VDS = 25V, ID = 400 mA | |
| Input Capacitance | CISS | 85 | 150 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 30 | 85 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 10 | 35 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Turn-Off Delay Time | td(OFF) | 20 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Fall Time | tf | 16 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 500 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 500 mA (Note 1) | ||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| Package Thermal Resistance (3-lead TO-92) | JA | 132 | C/W | |||
| Power Dissipation at TA = 25C (3-lead TO-92) | PD | 1 | W |
2410121621_MICROCHIP-TP0620N3-G_C632587.pdf
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