N Channel MOSFET MIRACLE POWER MS0003Y with 4.5 Milliohm On Resistance and 100V Drain Source Voltage
Key Attributes
Model Number:
MS0003Y
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
103A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.358nF
Pd - Power Dissipation:
89W
Output Capacitance(Coss):
924pF
Gate Charge(Qg):
64.3nC@10V
Mfr. Part #:
MS0003Y
Package:
PDFN5x6-8L
Product Description
Product Overview
The MS0003Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers a 100V drain-source voltage and a continuous drain current of 103A at 25C, with a low on-resistance of 4.5m (typ.) at VGS = 10V. It is designed for high-frequency switching and synchronous applications, including DC/DC converters. Key features include reliable and rugged construction, fast switching speed, and availability as a green device with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Series: MS0003Y
- Technology: Miracle Technology
- Certifications: Green Device Available, 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous, TC =25C | 103 | A | |||
| ID | Drain Current-Continuous, TC =100C | 65 | A | |||
| IDM | Drain Current-Pulsed | a | 142 | A | ||
| EAS | Avalanche Energy, Single pulse | b | 72 | mJ | ||
| IAS | Avalanche Current | 38 | A | |||
| PD | Maximum Power Dissipation @ TC=25C | 89 | W | |||
| TSTG | Store Temperature Range | -55 | 150 | C | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | Max | 1.4 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Maxc | 50 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 80V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 1.0 | - | 3.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 4.5 | 5.5 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 10A | - | 6.5 | 8.5 | m |
| gfs | Forward Transconductance | VDS= 5V, ID= 10A | - | 30.2 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, Freq.= 1.0MHz | - | 3358 | - | pF |
| Coss | Output Capacitance | - | 924 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 42 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 25V, ID =1A, RG = 3,VGS=10V | - | 13.3 | - | ns |
| tr | Turn-On Rise Time | - | 4.2 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 2.9 | - | ns | |
| tf | Turn-Off Fall Time | - | 101.4 | - | ns | |
| Qg | Total Gate Charge | VDS = 50V, ID = 20A, VGS = 4.5V | - | 32.9 | - | nC |
| Qg | Total Gate Charge | VDS = 50V, ID = 20A, VGS = 10V | - | 64.3 | - | nC |
| Qgs | Gate-Source Charge | - | 15.2 | - | - | |
| Qgd | Gate-Drain Charge | - | 14.6 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| RG | Gate Resistance | VDS=VGS=0V, Freq.=1MHz | - | 0.5 | - | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 10A | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | IF= 20A,VR=50V di/dt=1A/us, TJ=25C | - | 47.7 | - | ns |
| Qrr | Reverse Recovery Charge | - | 59.4 | - | nC | |
Notes:
a: Max. current is limited by junction temperature.
b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=23A.
c: Surface Mounted on 1in FR-4 board with 1oz.
d: Pulse test (pulse width300s, duty cycle2%).
e: Guaranteed by design, not subject to production testing.
2410122015_MIRACLE-POWER-MS0003Y_C17702011.pdf
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