MICROCHIP VN10KN3 G N Channel Vertical DMOS FET with 3 Lead TO 92 Package and Pb Free RoHS Compliance
Key Attributes
Model Number:
VN10KN3-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
60pF
Mfr. Part #:
VN10KN3-G
Package:
TO-92-3
Product Description
Product Overview
The VN10K is an N-Channel Enhancement-mode vertical DMOS FET designed for switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it ideal for applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: 3-lead TO-92
- Certifications: Pb-free/RoHS-compliant (G)
Technical Specifications
| Part Number | BVDSS/BVDGS (V) | RDS(ON) Max () | IDSS Min (mA) | ID(ON) Min (A) | VGS(th) (V) | Package |
|---|---|---|---|---|---|---|
| VN10K | 60 | 5 (at VGS=10V, ID=500mA) | 0.01 (at VGS=0V, VDS=45V) | 0.75 (at VGS=10V, VDS=10V) | 0.8 - 2.5 | 3-lead TO-92 |
| VN10K (TA=125C) | 60 | 5 (at VGS=10V, ID=500mA) | 0.5 (at VGS=0V, VDS=45V) | 0.75 (at VGS=10V, VDS=10V) | 0.8 - 2.5 | 3-lead TO-92 |
2410121807_MICROCHIP-VN10KN3-G_C632599.pdf
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