Depletion mode transistor MICROCHIP DN3525N8-G with low input capacitance and fast switching speeds
Key Attributes
Model Number:
DN3525N8-G
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@0V,200mA
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Pd - Power Dissipation:
1.6W
Input Capacitance(Ciss):
350pF@5V
Mfr. Part #:
DN3525N8-G
Package:
SOT-89-3
Product Description
DN3525 N-Channel Depletion-Mode Vertical DMOS FET
The DN3525 is a low-threshold, normally-on depletion-mode transistor featuring an advanced vertical DMOS structure. It offers high input impedance, low input capacitance, fast switching speeds, and low on-resistance, combined with the power handling capabilities of bipolar transistors. This device is free from thermal runaway and thermally induced secondary breakdown, making it suitable for a wide range of switching and amplifying applications. Its inherent positive temperature coefficient in MOS devices ensures reliability.
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Constant-Current Sources
- Power Supply Circuits
- Telecommunication Switches
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: 3-lead SOT-89
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSX | 250 | V | VGS = 5V, ID = 100 A | ||
| Gate-to-Source Off Voltage | VGS(OFF) | 1.5 | 3.5 | V | VDS = 15V, ID = 1 mA | |
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20 V, VDS = 0V | ||
| Drain-to-Source Leakage Current | ID(OFF) | 1 | A | VDS = Maximum rating, VGS = 5V | ||
| Saturated Drain-to-Source Current | IDSS | 300 | mA | VGS = 0V, VDS = 15V | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 6 | VGS = 0V, ID = 200 mA | |||
| Forward Transconductance | GFS | 225 | mmho | VDS = 10V, ID = 150 mA | ||
| Input Capacitance | CISS | 270 | 350 | pF | VGS = 5V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 20 | 60 | pF | VGS = 5V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 5 | 20 | pF | VGS = 5V, VDS = 25V, f = 1 MHz | |
| Turn-On Delay Time | td(ON) | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 25, VGS = 0V to 10V | ||
| Rise Time | tr | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25, VGS = 0V to 10V | ||
| Turn-Off Delay Time | td(OFF) | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25, VGS = 0V to 10V | ||
| Fall Time | tf | 40 | ns | VDD = 25V, ID = 150 mA, RGEN = 25, VGS = 0V to 10V | ||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 5V, ISD = 150 mA | ||
| Reverse Recovery Time | trr | 800 | ns | VGS = 5V, ISD = 150 mA | ||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| Package Thermal Resistance (3-lead SOT-89) | JA | 133 | C/W | |||
| Power Dissipation (SOT-89, TA = 25C) | PD | 1.6 | W | Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm |
2410121817_MICROCHIP-DN3525N8-G_C616348.pdf
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