power management solution MIRACLE POWER MPD07N65 N Channel MOSFET with fast switching and low Crss

Key Attributes
Model Number: MPD07N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.13nF
Output Capacitance(Coss):
93pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
MPD07N65
Package:
TO-252
Product Description

Product Overview

The MPD07N65 is a high-performance N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers a robust 650V breakdown voltage and a continuous drain current of 7A. Key features include low Crss, fast switching speeds, and 100% avalanche testing, making it ideal for demanding applications such as adaptors, standby power supplies, switching power supplies, and LED power systems. Its optimized design ensures efficient power management and reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPD Series
  • Technology: N-Channel Power MOSFET
  • Package: TO-252

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 650V, 7A, 1.1
Low Crss
Fast Switching
100% Avalanche Tested
Applications
Adaptor
Standby Power
Switching Power Supply
LED Power
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous TC = 25C 7 A
ID Drain Current-Continuous TC = 100C 4.4 A
IDM Drain Current-Pulsed 28 A
PD Maximum Power Dissipation TJ = 25C 100 W
EAS Single Pulsed Avalanche Energy 245 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Junction-to-Case 1.25 C/W
RJA Junction-to-Ambient 100 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2 4 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A 1.1 1.4
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz 1130 pF
Coss Output Capacitance 93 pF
Crss Reverse Transfer Capacitance 5.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID = 7A, VGS = 10V 19 ns
tr Turn-On Rise Time 21 ns
td(off) Turn-Off Delay Time 42 ns
tf Turn-Off Fall Time 19 ns
Qg Total Gate Charge VDS = 520V, ID = 7A, VGS = 10V 24 nC
Qgs Gate-Source Charge 5.1 nC
Qgd Gate-Drain Charge 9.5 nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V 7 A
ISM Maximum Pulsed Current VGS = 0V 28 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A 1.4 V
Trr Body Diode Reverse Recovery Time di/dt=100A/us, IS=7A, VGS = 0V 380 ns
Qrr Body Diode Reverse Recovery Charge di/dt=100A/us, IS=7A, VGS = 0V 1900 nC

2410122015_MIRACLE-POWER-MPD07N65_C17701979.pdf

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