MDD Microdiode Semiconductor 2N7002K N Channel MOSFET optimized for battery powered system switching
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
1.9Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
21pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is a 60V N-Channel Enhancement Mode MOSFET designed for voltage-controlled small signal switching applications. It features Trench Power MV MOSFET technology, offering low input capacitance, fast switching speeds, and low input/output leakage. This device is ESD protected up to 2KV (HBM) and is suitable for battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=60V, VGS=0V | -- | -- | 1 | uA |
| Drain-Source Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 10 | V |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1 | 2.5 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=300mA | -- | 2.5 | -- | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=200mA | -- | 3.0 | -- | |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | -- | 21 | -- | pF |
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1MHz | -- | 9 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1MHz | -- | 4 | -- | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=0.3A | -- | 1.22 | 2.4 | nC |
| Gate Source Charge | Qgs | VDS=30V, VGS=10V, ID=0.3A | -- | 0.5 | -- | nC |
| Gate Drain Charge | Qgd | VDS=30V, VGS=10V, ID=0.3A | -- | 0.18 | -- | nC |
| Turn on Delay Time | td(on) | VDS=30V, VGS=10V, ID=300mA, RG=6 | -- | 7 | -- | ns |
| Turn on Rise Time | tr | VDS=30V, VGS=10V, ID=300mA, RG=6 | -- | 19 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=30V, VGS=10V, ID=300mA, RG=6 | -- | 20 | -- | ns |
| Turn Off Fall Time | tf | VDS=30V, VGS=10V, ID=300mA, RG=6 | -- | 84 | -- | ns |
| Source drain current (Body Diode) | ISD | -- | -- | 300 | mA | |
| Drain-Source Diode Forward Voltage | VSD | IS=300mA, VGS=0V | -- | 1.2 | -- | V |
| Continuous Drain Current | ID | TA=25 | -- | -- | 300 | mA |
| Power Dissipation | PD | TA=25 | -- | -- | 300 | mW |
| Thermal Resistance Junction to Ambient | RJA | TA=25 | -- | -- | 416 | /W |
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | ~150 | -- | ||
| Pulsed Drain Current | IDM | -- | -- | 1.5 | A | |
| Drain-Source Voltage | VDS | -- | -- | 60 | V | |
| Gate-Source Voltage | VGS | -- | 20 | -- | V |
2411211951_MDD-Microdiode-Semiconductor-2N7002K_C414015.pdf
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