High Breakdown Voltage N Channel Vertical DMOS FET MICROCHIP TN2106N3 G for Amplifying and Switching
Key Attributes
Model Number:
TN2106N3-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
740mW
Mfr. Part #:
TN2106N3-G
Package:
TO-92
Product Description
Product Overview
The TN2106 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET featuring a vertical DMOS structure and a silicon-gate manufacturing process. This device offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally induced secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | V | ||||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | VGS | -20 | +20 | V | ||
| Operating Ambient Temperature | TA | -55 | +150 | C | ||
| Storage Temperature | TS | -55 | +150 | C | ||
| DC Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 1 mA | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 2 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | -3.8 | -5.5 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 0.1 | 100 | nA | VGS = 20V, VDS = 0V | |
| Zero-Gate Voltage Drain Current | IDSS | 1 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 100 | A | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.6 | A | VGS = 10V, VDS = 25V | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 5 | VGS = 4.5V, ID = 200 mA | |||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2.5 | VGS = 10V, ID = 500 mA | |||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.7 | %/C | VGS = 10V, ID = 500 mA (Note 1) | ||
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 150 | 400 | mmho | VDS = 25V, ID = 500 mA | |
| Input Capacitance | CISS | 35 | 50 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common-Source Output Capacitance | COSS | 17 | 25 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 7 | 8 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Turn-On Delay Time | td(ON) | 3 | 5 | ns | VDD = 25V, ID = 0.5A, RGEN = 25 | |
| Rise Time | tr | 5 | 8 | ns | VDD = 25V, ID = 0.5A, RGEN = 25 | |
| Turn-Off Delay Time | td(OFF) | 6 | 9 | ns | VDD = 25V, ID = 0.5A, RGEN = 25 | |
| Fall Time | tf | 5 | 8 | ns | VDD = 25V, ID = 0.5A, RGEN = 25 | |
| Diode Parameters | ||||||
| Diode Forward Voltage Drop | VSD | 1.2 | 1.8 | V | VGS = 0V, ISD = 500 mA (Note 1) | |
| Reverse Recovery Time | trr | 400 | ns | VGS = 0V, ISD = 500 mA (Note 1) | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | -55 | +150 | C | ||
| Storage Temperature | TS | -55 | +150 | C | ||
| Package Thermal Resistance | ||||||
| 3-lead SOT-23 | JA | 203 | C/W | |||
| 3-lead TO-92 | JA | 132 | C/W | |||
| Thermal Characteristics | ||||||
| Package | ID (continuous) (mA) | ID (Pulsed) (A) | Power Dissipation at TA = 25C (W) | IDR (mA) (Note 1) | IDRM (A) | |
| 3-lead SOT-23 | 280 | 0.8 | 0.36 | 280 | 0.8 | |
| 3-lead TO-92 | 300 | 1 | 0.74 | 300 | 1 | |
| Product Summary | ||||||
| BVDSS/BVDGS (V) | RDS(ON) (Maximum) () | VGS(th) (Maximum) (V) | ||||
| 60 | 2.5 | 2 | TN2106 | |||
2410121918_MICROCHIP-TN2106N3-G_C632581.pdf
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