60V N Channel Enhancement Mode MOSFET MDD Microdiode Semiconductor MDD50N06D with Low On Resistance
Key Attributes
Model Number:
MDD50N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-
RDS(on):
17mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
92pF
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
1.889nF@30V
Gate Charge(Qg):
-
Mfr. Part #:
MDD50N06D
Package:
TO-252
Product Description
Product Overview
The MDD50N06D is a 60V N-Channel Enhancement Mode MOSFET designed for switching applications. It features low on-resistance (RDS(ON) 17m @ VGS=10V, ID=20A), high switching speed, and improved dv/dt capability, making it suitable for demanding power management tasks.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 50 | A | TA=25unless otherwise noted |
| Power Dissipation | PD | 62.5 | W | TA=25unless otherwise noted |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -50 ~+150 | ||
| Pulsed Drain Current | IDM | 200 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 98 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 10 | V/ns | Note 4 |
| Thermal Resistance Junction to Ambient | RJA | 62 | /W | |
| Thermal Resistance Junction to Case | RJC | 2 | /W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250A |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.5 | V | VDS=VGS, ID=250A |
| Drain-Source On-State Resistance | RDS(ON) | 17 | m | VGS=10V, ID=20A |
| Input Capacitance | Ciss | 1889 | pF | VDS=30V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 113 | pF | VDS=30V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 92 | pF | VDS=30V, VGS=0V, f=1MHz |
| Total Gate Charge | Qg | 40 | nC | VDS=30V, VGS=10V, ID=20A (Note1,2) |
| Gate Source Charge | Qgs | 7.8 | nC | VDS=30V, VGS=10V, ID=20A (Note1,2) |
| Gate Drain Charge | Qgd | 8.3 | nC | VDS=30V, VGS=10V, ID=20A (Note1,2) |
| Turn on Delay Time | td(on) | 13 | ns | VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2) |
| Turn on Rise Time | tr | 25 | ns | VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2) |
| Turn Off Delay Time | td(off) | 60 | ns | VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2) |
| Turn Off Fall Time | tf | 9 | ns | VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2) |
| Source drain current(Body Diode) | ISD | 50 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | IS=20A, VGS=0V |
| Body Diode Reverse Recovery Time | trr | 29 | ns | IS=20A, VGS=0V, dIs/dt=100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 21 | nC | IS=20A, VGS=0V, dIs/dt=100A/s |
2408090958_MDD-Microdiode-Semiconductor-MDD50N06D_C5299416.pdf
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