MDD Microdiode Semiconductor MDDG10R08D MOSFET 100V N Channel Featuring Shielded Gate and UIS Tested
Key Attributes
Model Number:
MDDG10R08D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
75A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Pd - Power Dissipation:
100W
Output Capacitance(Coss):
890pF
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
MDDG10R08D
Package:
TO-252
Product Description
Product Overview
The MDDG10R08D is a 100V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. This MOSFET is optimized for minimal on-state resistance and superior switching performance, featuring a best-in-class soft body diode. It is designed for applications such as synchronous rectification for AC/DC quick chargers, motor drives, uninterruptible power supplies, micro solar inverters, and battery management systems. The device is 100% UIS Tested and RoHS Compliant.
Product Attributes
- Brand: MDD Semiconductor
- Product Name: MDDG10R08D
- Technology: Advanced Power Trench process with Shielded Gate
- Certifications: RoHS Compliant
- Testing: 100% UIS Tested
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C (Note 1) | 75 | A | ||
| Pulsed Drain Current | IDM | (Note 2) | 300 | A | ||
| Single Pulsed Avalanche Energy | EAS | (Note 3) | 85.5 | mJ | ||
| Power Dissipation | PD | TA=25°C | 100 | W | ||
| Storage Temperature | Tstg | -55~+150 | +150 | °C | ||
| Junction Temperature | TJ | -55 | +150 | °C | ||
| Thermal Resistance, steady-state | RθJA | 50 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250μA | 100 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V | ±100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | 1 | μA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 1.5 | 2.0 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=35A | 8.0 | 11 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=30A | 8.0 | 11.5 | mΩ | |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VGS=10V, VDD=50V, ID=30A, RG=2.7 Ω | 9 | ns | ||
| Turn on Rise Time | tr | 36 | ns | |||
| Turn Off Fall Time | tf | 33 | ns | |||
| Turn Off Delay Time | td(off) | 10 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=30A, VGS=0V | 0.85 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=30A, di/dt=100A/μs | 50 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | 71 | nC | |||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=50V, f=1MHz | 2000 | pF | ||
| Output Capacitance | Coss | 890 | pF | |||
| Reverse Transfer Capacitance | Crss | 65 | pF | |||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=30A | 41 | nC | ||
| Gate Source Charge | Qgs | 10.3 | nC | |||
| Gate Drain Charge | Qgd | 7.5 | nC | |||
2507231537_MDD-Microdiode-Semiconductor-MDDG10R08D_C45991084.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
